| Heavy metals pollution in surface soils in the vicinity of abundant railway servicing workshop in Kumasi, Ghana O Akoto, JH Ephraim, G Darko INTERNATIONAL JOURNAL OF ENVIRONMENTAL RESEARCH (IJER) 2 (4), 359-364, 2008 | 207 | 2008 |
| Enhanced tunnel spin injection into graphene using chemical vapor deposited hexagonal boron nitride MV Kamalakar, A Dankert, J Bergsten, T Ive, SP Dash Scientific reports 4 (1), 6146, 2014 | 182 | 2014 |
| Causes of incorrect carrier-type identification in van der Pauw–Hall measurements O Bierwagen, T Ive, CG Van de Walle, JS Speck Applied Physics Letters 93 (24), 2008 | 127 | 2008 |
| Controlled n-type doping of AlN: Si films grown on 6H-SiC (0001) by plasma-assisted molecular beam epitaxy T Ive, O Brandt, H Kostial, KJ Friedland, L Däweritz, KH Ploog Applied Physics Letters 86 (2), 2005 | 100 | 2005 |
| Crack-free and conductive Si-doped AlN∕ GaN distributed Bragg reflectors grown on 6H-SiC (0001) T Ive, O Brandt, H Kostial, T Hesjedal, M Ramsteiner, KH Ploog Applied Physics Letters 85 (11), 1970-1972, 2004 | 63 | 2004 |
| Properties of InN layers grown on 6H–SiC (0001) by plasma-assisted molecular beam epitaxy T Ive, O Brandt, M Ramsteiner, M Giehler, H Kostial, KH Ploog Applied physics letters 84 (10), 1671-1673, 2004 | 59 | 2004 |
| Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures MV Kamalakar, A Dankert, J Bergsten, T Ive, SP Dash Applied Physics Letters 105 (21), 2014 | 54 | 2014 |
| Step-flow growth of ZnO (0 0 0 1) on GaN (0 0 0 1) by metalorganic chemical vapor epitaxy T Ive, T Ben-Yaacov, CG Van de Walle, UK Mishra, SP DenBaars, ... Journal of Crystal Growth 310 (15), 3407-3412, 2008 | 36 | 2008 |
| Nucleation and epitaxial growth of ZnO on GaN (0001) D Adolph, T Ive Applied Surface Science 307, 438-443, 2014 | 26 | 2014 |
| Direct chemical vapor deposition of large-area carbon thin films on gallium nitride for transparent electrodes: A first attempt J Sun, MT Cole, SA Ahmad, O Backe, T Ive, M Loffler, N Lindvall, E Olsson, ... IEEE Transactions on Semiconductor Manufacturing 25 (3), 494-501, 2012 | 25 | 2012 |
| Dissipation-factor-based criterion for the validity of carrier-type identification by capacitance-voltage measurements O Bierwagen, T Nagata, T Ive, CG Van de Walle, JS Speck Applied Physics Letters 94 (15), 2009 | 25 | 2009 |
| (Al, In) N layers and (Al, In) N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on 6 H-SiC (0001) T Ive, O Brandt, X Kong, A Trampert, KH Ploog Physical Review B 78 (3), 035311, 2008 | 25 | 2008 |
| Properties of In-doped ZnO films grown by metalorganic chemical vapor deposition on GaN (0001) templates T Ben-Yaacov, T Ive, CG Van de Walle, UK Mishra, JS Speck, ... Journal of Electronic Materials 39, 608-611, 2010 | 23 | 2010 |
| Equivalent-circuit analysis for the electroluminescence-efficiency problem of InGaN/GaN light-emitting diodes H Masui, T Ive, MC Schmidt, NN Fellows, H Sato, H Asamizu, S Nakamura, ... Japanese journal of applied physics 47 (4R), 2112, 2008 | 20 | 2008 |
| Exciton impact-ionization dynamics modulated by surface acoustic waves in GaN J Pedrós, Y Takagaki, T Ive, M Ramsteiner, O Brandt, U Jahn, KH Ploog, ... Physical Review B 75 (11), 115305, 2007 | 20 | 2007 |
| Metalorganic chemical vapor deposition of ZnO (0001) thin films on GaN (0001) templates and ZnO (0001) substrates T Ive, T Ben‐Yaacov, A Murai, H Asamizu, CG Van de Walle, U Mishra, ... physica status solidi c 5 (9), 3091-3094, 2008 | 17 | 2008 |
| Comparison of the spectral and temporal emission characteristics of homoepitaxial and heteroepitaxial ZnO nanowires C Pfüller, O Brandt, T Flissikowski, HT Grahn, T Ive, JS Speck, ... Applied Physics Letters 98 (11), 2011 | 14 | 2011 |
| Growth of ZnO (0001) on GaN (0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy D Adolph, T Tingberg, T Ive Journal of Crystal Growth 426, 129-134, 2015 | 12 | 2015 |
| Hybrid ZnO/GaN distributed Bragg reflectors grown by plasma-assisted molecular beam epitaxy D Adolph, RR Zamani, KA Dick, T Ive APL Materials 4 (8), 2016 | 9 | 2016 |
| Conductive and crack-free AlN/GaN: Si distributed Bragg reflectors grown on 6H-SiC (0 0 0 1) T Ive, O Brandt, KH Ploog Journal of crystal growth 278 (1-4), 355-360, 2005 | 9 | 2005 |
