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Osama Nayfeh
Osama Nayfeh
US Naval Information Warfare Center (NIWC)
Verified email at navy.mil - Homepage
Title
Cited by
Cited by
Year
Design of tunneling field-effect transistors using strained-silicon/strained-germanium type-II staggered heterojunctions
OM Nayfeh, CN Chleirigh, J Hennessy, L Gomez, JL Hoyt, DA Antoniadis
IEEE Electron Device Letters 29 (9), 1074-1077, 2008
3122008
A simple semiempirical short-channel MOSFET current–voltage model continuous across all regions of operation and employing only physical parameters
A Khakifirooz, OM Nayfeh, D Antoniadis
IEEE Transactions on Electron Devices 56 (8), 1674-1680, 2009
2932009
Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations
DA Antoniadis, I Aberg, CN Chleirigh, OM Nayfeh, A Khakifirooz, JL Hoyt
IBM Journal of Research and Development 50 (4.5), 363-376, 2006
1862006
Strained- Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior
OM Nayfeh, JL Hoyt, DA Antoniadis
IEEE transactions on electron devices 56 (10), 2264-2269, 2009
1002009
Thin film silicon nanoparticle UV photodetector
OM Nayfeh, S Rao, A Smith, J Therrien, MH Nayfeh
IEEE photonics technology letters 16 (8), 1927-1929, 2004
892004
Flexible supercapacitor sheets based on hybrid nanocomposite materials
Q Liu, O Nayfeh, MH Nayfeh, ST Yau
Nano Energy 2 (1), 133-137, 2013
812013
Impact of plasma-assisted atomic-layer-deposited gate dielectric on graphene transistors
OM Nayfeh, T Marr, M Dubey
IEEE Electron Device Letters 32 (4), 473-475, 2011
582011
UV photodetectors with thin-film Si nanoparticle active medium
MH Nayfeh, S Rao, OM Nayfeh, A Smith, J Therrien
IEEE Transactions on Nanotechnology 4 (6), 660-668, 2005
512005
Memory effects in metal-oxide-semiconductor capacitors incorporating dispensed highly monodisperse 1nm silicon nanoparticles
OM Nayfeh, DA Antoniadis, K Mantey, MH Nayfeh
Applied Physics Letters 90 (15), 2007
492007
Graphene transistors on mechanically flexible polyimide incorporating atomic-layer-deposited gate dielectric
OM Nayfeh
IEEE electron device letters 32 (10), 1349-1351, 2011
342011
Revival of interband crystalline reflectance from nanocrystallites in porous silicon by immersion plating
Z Yamani, A Alaql, J Therrien, O Nayfeh, M Nayfeh
Applied physics letters 74 (23), 3483-3485, 1999
331999
Increased mobility for layer-by-layer transferred chemical vapor deposited graphene/boron-nitride thin films
OM Nayfeh, A Glen Birdwell, C Tan, M Dubey, H Gullapalli, Z Liu, ...
Applied Physics Letters 102 (10), 2013
292013
Radio-frequency transistors using chemical-vapor-deposited monolayer graphene: performance, doping, and transport effects
OM Nayfeh
IEEE transactions on electron devices 58 (9), 2847-2853, 2011
252011
Coated spherical silicon nanoparticle thin film UV detector with UV response and method of making
MH Nayfeh, OM Nayfeh
US Patent 6,992,298, 2006
252006
Quantum computing with photonic/ionic tuning of entanglement
C Newton, O Nayfeh, K Simonsen
US Patent 10,133,986, 2018
242018
Uniform delivery of silicon nanoparticles on device quality substrates using spin coating from isopropyl alcohol colloids
OM Nayfeh, DA Antoniadis, K Mantey, MH Nayfeh
Applied Physics Letters 94 (4), 2009
232009
Measurement of enhanced gate-controlled band-to-band tunneling in highly strained silicon-germanium diodes
OM Nayfeh, CÁNÍ ChlÉirighChleirigh, JL Hoyt, DA Antoniadis
IEEE electron device letters 29 (5), 468-470, 2008
232008
Advanced process flow for quantum memory devices and josephson junctions with heterogeneous integration
OM Nayfeh, S Dinh, AL de Escobar, K Simonsen
US Patent 9,455,391, 2016
222016
High mobility, thin film transistors using semiconductor/insulator transition-metal dichalcogenide based interfaces
OM Nayfeh
US Patent 9,190,509, 2015
212015
Reconfigurable, tunable quantum qubit circuits with internal, nonvolatile memory
OM Nayfeh, S Dinh, AL de Escobar, K Simonsen, S Naderi
US Patent 9,755,133, 2017
192017
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