A CMOS silicon spin qubit R Maurand, X Jehl, D Kotekar-Patil, A Corna, H Bohuslavskyi, R Laviéville, ... Nature communications 7 (1), 1-6, 2016 | 424 | 2016 |
Ballistic interferences in suspended graphene P Rickhaus, R Maurand, MH Liu, M Weiss, K Richter, C Schönenberger Nature communications 4 (1), 1-6, 2013 | 194 | 2013 |
Snake trajectories in ultraclean graphene p–n junctions P Rickhaus, P Makk, MH Liu, E Tóvári, M Weiss, R Maurand, K Richter, ... Nature communications 6 (1), 1-6, 2015 | 115 | 2015 |
Nonlocal spectroscopy of Andreev bound states J Schindele, A Baumgartner, R Maurand, M Weiss, C Schönenberger Physical Review B 89 (4), 045422, 2014 | 96 | 2014 |
First-Order Quantum Phase Transition in the Kondo Regime of a Superconducting Carbon-Nanotube Quantum Dot R Maurand, T Meng, E Bonet, S Florens, L Marty, W Wernsdorfer Physical Review X 2 (1), 011009, 2012 | 95 | 2012 |
Scalable tight-binding model for graphene MH Liu, P Rickhaus, P Makk, E Tóvári, R Maurand, F Tkatschenko, ... Physical review letters 114 (3), 036601, 2015 | 92 | 2015 |
Electrical Spin Driving by -Matrix Modulation in Spin-Orbit Qubits A Crippa, R Maurand, L Bourdet, D Kotekar-Patil, A Amisse, X Jehl, ... Physical review letters 120 (13), 137702, 2018 | 89 | 2018 |
Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET B Voisin, R Maurand, S Barraud, M Vinet, X Jehl, M Sanquer, J Renard, ... Nano letters 16 (1), 88-92, 2016 | 89 | 2016 |
Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon A Crippa, R Ezzouch, A Aprá, A Amisse, R Laviéville, L Hutin, B Bertrand, ... Nature communications 10 (1), 1-6, 2019 | 83 | 2019 |
Gate-based high fidelity spin readout in a CMOS device M Urdampilleta, DJ Niegemann, E Chanrion, B Jadot, C Spence, ... Nature nanotechnology 14 (8), 737-741, 2019 | 80 | 2019 |
Guiding of electrons in a few-mode ballistic graphene channel P Rickhaus, MH Liu, P Makk, R Maurand, S Hess, S Zihlmann, M Weiss, ... Nano letters 15 (9), 5819-5825, 2015 | 79 | 2015 |
Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot A Corna, L Bourdet, R Maurand, A Crippa, D Kotekar-Patil, ... npj quantum information 4 (1), 1-7, 2018 | 77 | 2018 |
Large-scale fabrication of BN tunnel barriers for graphene spintronics W Fu, P Makk, R Maurand, M Bräuninger, C Schönenberger Journal of applied physics 116 (7), 074306, 2014 | 55 | 2014 |
Germanium quantum-well Josephson field-effect transistors and interferometers F Vigneau, R Mizokuchi, DC Zanuz, X Huang, S Tan, R Maurand, S Frolov, ... Nano letters 19 (2), 1023-1027, 2019 | 46 | 2019 |
19.2 A 110mK 295µW 28nm FDSOI CMOS Quantum Integrated Circuit with a 2.8 GHz Excitation and nA Current Sensing of an On-Chip Double Quantum Dot L Le Guevel, G Billiot, X Jehl, S De Franceschi, M Zurita, Y Thonnart, ... 2020 IEEE International Solid-State Circuits Conference-(ISSCC), 306-308, 2020 | 40 | 2020 |
SOI technology for quantum information processing S De Franceschi, L Hutin, R Maurand, L Bourdet, H Bohuslavskyi, ... 2016 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4, 2016 | 35 | 2016 |
Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction H Bohuslavskyi, D Kotekar-Patil, R Maurand, A Corna, S Barraud, ... Applied Physics Letters 109 (19), 193101, 2016 | 35 | 2016 |
Fabrication of ballistic suspended graphene with local-gating R Maurand, P Rickhaus, P Makk, S Hess, E Tovari, C Handschin, M Weiss, ... Carbon 79, 486-492, 2014 | 35 | 2014 |
Spin symmetry of the bilayer graphene ground state F Freitag, M Weiss, R Maurand, J Trbovic, C Schönenberger Physical Review B 87 (16), 161402, 2013 | 34 | 2013 |
Charge detection in an array of CMOS quantum dots E Chanrion, DJ Niegemann, B Bertrand, C Spence, B Jadot, J Li, ... Physical Review Applied 14 (2), 024066, 2020 | 32 | 2020 |