| Band engineering at interfaces: theory and numerical experiments M Peressi, N Binggeli, A Baldereschi Journal of Physics D: Applied Physics 31 (11), 1273, 1998 | 330 | 1998 |
| First-principle study of hydroxyl functional groups on pristine, defected graphene, and graphene epoxide N Ghaderi, M Peressi The Journal of Physical Chemistry C 114 (49), 21625-21630, 2010 | 260 | 2010 |
| Carbon dioxide hydrogenation on Ni (110) E Vesselli, L De Rogatis, X Ding, A Baraldi, L Savio, L Vattuone, M Rocca, ... Journal of the American Chemical Society 130 (34), 11417-11422, 2008 | 182 | 2008 |
| Local interface composition and band discontinuities in heterovalent heterostructures R Nicolini, L Vanzetti, G Mula, G Bratina, L Sorba, A Franciosi, M Peressi, ... Physical review letters 72 (2), 294, 1994 | 164 | 1994 |
| Real-time imaging of adatom-promoted graphene growth on nickel LL Patera, F Bianchini, C Africh, C Dri, G Soldano, MM Mariscal, ... Science 359 (6381), 1243-1246, 2018 | 139 | 2018 |
| Hydrogen-Assisted Transformation of CO2 on Nickel: The Role of Formate and Carbon Monoxide E Vesselli, M Rizzi, L De Rogatis, X Ding, A Baraldi, G Comelli, L Savio, ... The Journal of Physical Chemistry Letters 1 (1), 402-406, 2010 | 139 | 2010 |
| Atomic scale identification of coexisting graphene structures on Ni (111) F Bianchini, LL Patera, M Peressi, C Africh, G Comelli The journal of physical chemistry letters 5 (3), 467-473, 2014 | 127 | 2014 |
| Tuning band offsets at semiconductor interfaces by intralayer deposition M Peressi, S Baroni, R Resta, A Baldereschi Physical Review B 43 (9), 7347, 1991 | 122 | 1991 |
| Electron localization in the insulating state: Application to crystalline semiconductors C Sgiarovello, M Peressi, R Resta Physical Review B 64 (11), 115202, 2001 | 108 | 2001 |
| Interaction of carbon dioxide with Ni (110): A combined experimental and theoretical study X Ding, L De Rogatis, E Vesselli, A Baraldi, G Comelli, R Rosei, L Savio, ... Physical review B 76 (19), 195425, 2007 | 102 | 2007 |
| Spectroscopy of semiconductor microstructures S Baroni, R Resta, A Baldereschi, M Peressi, G Fasol, A Fasolino, P Lugli NATO Advanced Research Workshop on Spectroscopy of Semiconductor …, 1989 | 87 | 1989 |
| Structural and electronic properties of M Peressi, A Baldereschi Journal of applied physics 83 (6), 3092-3095, 1998 | 60 | 1998 |
| Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures G Biasiol, L Sorba, G Bratina, R Nicolini, A Franciosi, M Peressi, S Baroni, ... Physical review letters 69 (8), 1283, 1992 | 56 | 1992 |
| Ab initio calculation of the band offset at strained GaAs/InAs (001) heterojunctions N Tit, M Peressi, S Baroni Physical Review B 48 (23), 17607, 1993 | 53 | 1993 |
| Electronic structure of InP/As interfaces M Peressi, S Baroni, A Baldereschi, R Resta Physical Review B 41 (17), 12106, 1990 | 47 | 1990 |
| Structural properties and energetics of intrinsic and Si-doped GaAs nanowires: first-principles pseudopotential calculations N Ghaderi, M Peressi, N Binggeli, H Akbarzadeh Physical Review B 81 (15), 155311, 2010 | 46 | 2010 |
| Computational and experimental imaging of Mn defects on GaAs (110) cross-sectional surfaces A Stroppa, X Duan, M Peressi, D Furlanetto, S Modesti Physical Review B 75 (19), 195335, 2007 | 45 | 2007 |
| Stabilization of half metallicity in Mn-doped silicon upon Ge alloying S Picozzi, F Antoniella, A Continenza, A MoscaConte, A Debernardi, ... Physical Review B 70 (16), 165205, 2004 | 45 | 2004 |
| Structural and electronic properties of NiMnSb Heusler compound and its interface with GaAs A Debernardi, M Peressi, A Baldereschi Materials Science and Engineering: C 23 (6-8), 743-746, 2003 | 45 | 2003 |
| Composition and strain dependence of band offsets at metamorphic heterostructures A Stroppa, M Peressi Physical Review B 71 (20), 205303, 2005 | 40 | 2005 |
