| High in-plane thermal conductivity of aluminum nitride thin films MSB Hoque, YR Koh, JL Braun, A Mamun, Z Liu, K Huynh, ME Liao, ... ACS nano 15 (6), 9588-9599, 2021 | 65 | 2021 |
| Bulk-like intrinsic phonon thermal conductivity of micrometer-thick AlN films YR Koh, Z Cheng, A Mamun, MS Bin Hoque, Z Liu, T Bai, K Hussain, ... ACS applied materials & interfaces 12 (26), 29443-29450, 2020 | 41 | 2020 |
| Doped Barrier Al0.65Ga0.35N/Al0.40Ga0.60N MOSHFET With SiO2Gate-Insulator and Zr-Based Ohmic Contacts X Hu, S Hwang, K Hussain, R Floyd, S Mollah, F Asif, G Simin, A Khan IEEE Electron Device Letters 39 (10), 1568-1571, 2018 | 38 | 2018 |
| Al0. 75Ga0. 25N/Al0. 6Ga0. 4N heterojunction field effect transistor with fT of 40 GHz H Xue, CH Lee, K Hussian, T Razzak, M Abdullah, Z Xia, SH Sohel, ... Applied Physics Express 12 (6), 066502, 2019 | 33 | 2019 |
| Enhanced light extraction efficiency of micropixel geometry AlGaN DUV light-emitting diodes R Floyd, M Gaevski, K Hussain, A Mamun, MVS Chandrashekhar, ... Applied Physics Express 14 (8), 084002, 2021 | 29 | 2021 |
| BaTiO3/Al0. 58Ga0. 42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm T Razzak, H Chandrasekar, K Hussain, CH Lee, A Mamun, H Xue, Z Xia, ... Applied Physics Letters 116 (2), 2020 | 28 | 2020 |
| Al0.65Ga0.35N/Al0.4Ga0.6N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm H Xue, K Hussain, T Razzak, M Gaevski, SH Sohel, S Mollah, V Talesara, ... IEEE Electron Device Letters 41 (5), 677-680, 2020 | 24 | 2020 |
| Photonics integrated circuits using AlxGa1− xN based UVC light-emitting diodes, photodetectors and waveguides R Floyd, K Hussain, A Mamun, M Gaevski, G Simin, ... Applied Physics Express 13 (2), 022003, 2020 | 19 | 2020 |
| An opto-thermal study of high brightness 280 nm emission AlGaN micropixel light-emitting diode arrays R Floyd, M Gaevski, MD Alam, S Islam, K Hussain, A Mamun, S Mollah, ... Applied Physics Express 14 (1), 014002, 2020 | 15 | 2020 |
| Ultrawide bandgap AlxGa1–xN channel heterostructure field transistors with drain currents exceeding 1.3 A mm− 1 M Gaevski, S Mollah, K Hussain, J Letton, A Mamun, MU Jewel, ... Applied Physics Express 13 (9), 094002, 2020 | 15 | 2020 |
| High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1− x N channel MOSHFET with drain current 0.48 A mm− 1 and threshold voltage+ 3.6 V S Mollah, K Hussain, A Mamun, M Gaevski, G Simin, ... Applied Physics Express 14 (1), 014003, 2021 | 14 | 2021 |
| Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric S Mollah, M Gaevski, MVS Chandrashekhar, X Hu, V Wheeler, K Hussain, ... Semiconductor Science and Technology 34 (12), 125001, 2019 | 14 | 2019 |
| Current collapse in high-Al channel AlGaN HFETs S Mollah, M Gaevski, K Hussain, A Mamun, R Floyd, X Hu, ... Applied Physics Express 12 (7), 074001, 2019 | 13 | 2019 |
| Growth evolution of high-quality MOCVD aluminum nitride using nitrogen as carrier gas on the sapphire substrate S Hasan, A Mamun, K Hussain, M Gaevski, I Ahmad, A Khan Journal of Materials Research 36, 4360-4369, 2021 | 12 | 2021 |
| High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer … S Mollah, K Hussain, R Floyd, A Mamun, M Gaevski, ... physica status solidi (a) 217 (7), 1900802, 2020 | 10 | 2020 |
| Photoconductive Thin Films Composed of Environmentally Benign AgBiS2 Nanocrystal Inks Obtained through a Rapid Phase Transfer Process ML Kelley, F Ahmed, SL Abiodun, M Usman, MU Jewel, K Hussain, ... ACS Applied Electronic Materials 3 (4), 1550-1555, 2021 | 9 | 2021 |
| Investigation of MOCVD grown crack-free 4 μm thick aluminum nitride using nitrogen as a carrier gas S Hasan, A Mamun, K Hussain, D Patel, M Gaevski, I Ahmad, A Khan MRS Advances 6 (17), 456-460, 2021 | 8 | 2021 |
| High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V H Xue, K Hussain, V Talesara, T Razzak, M Gaevski, S Mollah, S Rajan, ... physica status solidi (RRL)–Rapid Research Letters 15 (6), 2000576, 2021 | 8 | 2021 |
| Thermoreflectance Imaging of (Ultra)wide Band-Gap Devices with MoS2 Enhancement Coatings R Hanus, SV Rangnekar, S Mollah, K Hussain, N Hines, E Heller, ... ACS Applied Materials & Interfaces 13 (35), 42195-42204, 2021 | 7 | 2021 |
| Trap characterization in ultra-wide bandgap Al0. 65Ga0. 4N/Al0. 4Ga0. 6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence MU Jewel, MD Alam, S Mollah, K Hussain, V Wheeler, C Eddy, M Gaevski, ... Applied Physics Letters 115 (21), 2019 | 7* | 2019 |
