| Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques Y Yao, S Okur, LAM Lyle, GS Tompa, T Salagaj, N Sbrockey, RF Davis, ... Materials Research Letters 6 (5), 268-275, 2018 | 211 | 2018 |
| HCl Flow-Induced Phase Change of α-, β-, and ε-Ga2O3 Films Grown by MOCVD H Sun, KH Li, CGT Castanedo, S Okur, GS Tompa, T Salagaj, S Lopatin, ... Crystal Growth & Design 18 (4), 2370-2376, 2018 | 180 | 2018 |
| Carrier dynamics in bulk GaN P Šcˇajev, K Jarašiūnas, S Okur, Ü Özgür, H Morkoç Journal of Applied Physics 111 (2), 2012 | 96 | 2012 |
| Laser direct write synthesis of lead halide perovskites SS Chou, BS Swartzentruber, MT Janish, KC Meyer, LB Biedermann, ... The Journal of Physical Chemistry Letters 7 (19), 3736-3741, 2016 | 77 | 2016 |
| High-speed nonpolar InGaN/GaN LEDs for visible-light communication A Rashidi, M Monavarian, A Aragon, S Okur, M Nami, ... IEEE Photonics Technology Letters 29 (4), 381-384, 2017 | 76 | 2017 |
| Ballistic transport in InGaN-based LEDs: impact on efficiency Ü Özgür, X Ni, X Li, J Lee, S Liu, S Okur, V Avrutin, A Matulionis, H Morkoc Semiconductor science and technology 26 (1), 014022, 2010 | 42 | 2010 |
| Impact of active layer design on InGaN radiative recombination coefficient and LED performance X Li, S Okur, F Zhang, V Avrutin, Ü Özgür, H Morkoc, SM Hong, SH Yen, ... Journal of Applied Physics 111 (6), 2012 | 40 | 2012 |
| Tailoring the morphology and luminescence of GaN/InGaN core–shell nanowires using bottom-up selective-area epitaxy M Nami, RF Eller, S Okur, AK Rishinaramangalam, S Liu, I Brener, ... Nanotechnology 28 (2), 025202, 2016 | 39 | 2016 |
| Structural and magnetic characterization of plasma ion nitrided layer on 316L stainless steel alloy O Öztürk, S Okur, JP Riviere Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2009 | 36 | 2009 |
| Internal quantum efficiency and carrier dynamics in semipolar (20 21) InGaN/GaN light-emitting diodes S Okur, M Nami, AK Rishinaramangalam, SH Oh, SP DenBaars, S Liu, ... Optics express 25 (3), 2178-2186, 2017 | 34 | 2017 |
| High-power VCSEL arrays with customized beam divergence for 3D-sensing applications S Okur, M Scheller, JF Seurin, A Miglo, G Xu, D Guo, R Van Leeuwen, ... Vertical-Cavity Surface-Emitting Lasers XXIII 10938, 61-67, 2019 | 33 | 2019 |
| Enhancement of Be and Mg incorporation in wurtzite quaternary BeMgZnO alloys with up to 5.1 eV optical bandgap M Toporkov, V Avrutin, S Okur, N Izyumskaya, D Demchenko, J Volk, ... Journal of crystal growth 402, 60-64, 2014 | 33 | 2014 |
| Optical studies of strain and defect distribution in semipolar (11 01) GaN on patterned Si substrates N Izyumskaya, F Zhang, S Okur, T Selden, V Avrutin, Ü Özgür, S Metzner, ... Journal of Applied Physics 114 (11), 2013 | 32 | 2013 |
| Growth and Characterization of α-, β-, and ε-Ga2O3 Epitaxial Layers on Sapphire Y Yao, LAM Lyle, JA Rokholt, S Okur, GS Tompa, T Salagaj, N Sbrockey, ... ECS Transactions 80 (7), 191, 2017 | 31 | 2017 |
| CoCrMo alloy treated by floating potential plasma assisted nitriding and plasma based ion implantation: Influence of the hydrogen content and of the ion energy on the nitrogen … L Pichon, S Okur, O Öztürk, JP Riviere, M Drouet Surface and Coatings Technology 204 (18-19), 2913-2918, 2010 | 31 | 2010 |
| Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells D Rosales, B Gil, T Bretagnon, B Guizal, F Zhang, S Okur, M Monavarian, ... Journal of Applied Physics 115 (7), 2014 | 27 | 2014 |
| β-Ga2O3 thin film based lateral and vertical Schottky barrier diode D Khan, D Gajula, S Okur, GS Tompa, G Koley ECS Journal of Solid State Science and Technology 8 (6), Q106, 2019 | 26 | 2019 |
| The effect of stair case electron injector design on electron overflow in InGaN light emitting diodes F Zhang, X Li, S Hafiz, S Okur, V Avrutin, Ü Özgür, H Morkoç, A Matulionis Applied Physics Letters 103 (5), 2013 | 25 | 2013 |
| Structural and optical quality of GaN grown on Sc2O3/Y2O3/Si (111) L Tarnawska, P Zaumseil, MA Schubert, S Okur, U Ozgur, H Morkoç, ... Journal of Applied Physics 111 (7), 2012 | 24 | 2012 |
| Characterization of Epitaxial β-(Al, Ga, In) 2 O 3-Based Films and Applications as UV Photodetectors LAM Lyle, S Okur, VSN Chava, ML Kelley, RF Davis, GS Tompa, ... Journal of Electronic Materials, 1-9, 2020 | 23 | 2020 |
Hadis MorkoçVirginia Commonwealth UniversityVerified email at vcu.edu
