Andreij C. Gadelha.
Cited by
Cited by
Intralayer and interlayer electron–phonon interactions in twisted graphene heterostructures
GSN Eliel, MVO Moutinho, AC Gadelha, A Righi, LC Campos, HB Ribeiro, ...
Nature Communications 9 (1221), 2018
Robust nanofabrication of monolayer MoS2 islands with strong photoluminescence enhancement via local anodic oxidation
TFD Fernandes, A De C Gadelha, APM Barboza, RM Paniago, ...
2D Materials 5 (2), 025018, 2018
Temperature dependence of the double‐resonance Raman bands in monolayer MoS2
RN Gontijo, A Gadelha, OJ Silveira, BR Carvalho, RW Nunes, ...
Journal of Raman Spectroscopy 50 (12), 1867-1874, 2019
Gate-tunable non-volatile photomemory effect in MoS2 transistors
AC Gadelha, AR Cadore, K Watanabe, T Taniguchi, AM de Paula, ...
2D Materials 6 (2), 025036, 2019
Probing the Electronic Properties of Monolayer MoS2 via Interaction with Molecular Hydrogen
NP Rezende, AR Cadore, AC Gadelha, CL Pereira, V Ornelas, ...
Advanced Electronic Materials 5 (2), 1800591, 2019
Lattice dynamics localization in low-angle twisted bilayer graphene
AC Gadelha, DAA Ohlberg, C Rabelo, EGS Neto, TL Vasconcelos, ...
arXiv preprint arXiv:2006.09482, 2020
Reversible doping of graphene field effect transistors by molecular hydrogen: the role of the metal/graphene interface
CL Pereira, AR Cadore, NP Rezende, A Gadelha, EA Soares, ...
2D Materials 6 (2), 025037, 2019
Localization of lattice dynamics in low-angle twisted bilayer graphene
AC Gadelha, DAA Ohlberg, C Rabelo, EGS Neto, TL Vasconcelos, ...
Nature 590 (7846), 405-409, 2021
The limits of Near Field Immersion Microwave Microscopy evaluated by imaging bilayer graphene Moir\'{e} patterns
DAA Ohlberg, D Tami, AC Gadelha, EGS Neto, FC Santana, D Miranda, ...
arXiv preprint arXiv:2007.03823, 2020
Observation of moiré superlattices on twisted bilayer graphene by scanning microwave impedance microscopy
DAA Ohlberg, AC Gadelha, D Tamia, EGS Neto, DA Miranda, JS Lemos, ...
Low-Dimensional Materials and Devices 2020 11465, 114650J, 2020
Graphene Electromechanical Water Sensor: The Wetristor
LM Meireles, EGS Neto, GA Ferrari, PAA Neves, AC Gadelha, I Silvestre, ...
Advanced Electronic Materials 6 (2), 1901167, 2020
Temperature-dependent phonon dynamics and anharmonicity of suspended and supported few-layer gallium sulfide
FDV Araujo, VV Oliveira, AC Gadelha, TCV Carvalho, TFD Fernandes, ...
Nanotechnology 31 (49), 495702, 2020
Local photodoping in monolayer MoS2
AC Gadelha, AR Cadore, L Lafeta, AM de Paula, LM Malard, RG Lacerda, ...
Nanotechnology 31 (25), 255701, 2020
Twisted Bilayer Graphene: A Versatile Fabrication Method and the Detection of Variable Nanometric Strain Caused by Twist-Angle Disorder
AC Gadelha, DAA Ohlberg, FC Santana, GSN Eliel, JS Lemos, V Ornelas, ...
ACS Applied Nano Materials 4 (2), 1858-1866, 2021
Probing combinations of acoustic phonons in by intervalley double-resonance Raman scattering
RN Gontijo, A Gadelha, OJ Silveira, RW Nunes, MA Pimenta, A Righi, ...
Physical Review B 103 (4), 045411, 2021
Nanomechanics of few-layer materials: do individual layers slide upon folding?
RJC Batista, RF Dias, APM Barboza, AB de Oliveira, TM Manhabosco, ...
Beilstein journal of nanotechnology 11 (1), 1801-1808, 2020
Controlling the electronic bands of a 2D semiconductor by force microscopy
DB de Araújo, RQ Almeida, AC Gadelha, NP Rezende, F Salomão, ...
2D Materials 7 (4), 045029, 2020
Raman Enhancement effect using hexagonal Boron Nitride with a substrate
J Lemos, A Gadelha, C Leite, E Neto
Bulletin of the American Physical Society 65, 2020
Intralayer and interlayer electron-phonon interactions in twisted bilayer graphene
M Pimenta, A Righi, E da Silva Neto, A Gadelha, L Campos, M Moutinho, ...
APS March Meeting Abstracts 2019, L14. 014, 2019
Effects of H2 Interaction with MoS2: Electronic Behavior and Sensing Applications
N Rezende, A Cadore, A Gadelha, C Pereira, V da Silva, T Taniguchi, ...
APS March Meeting Abstracts 2019, F12. 003, 2019
The system can't perform the operation now. Try again later.
Articles 1–20