| Mechanisms of oxygen plasma nanotexturing of organic polymer surfaces: from stable super hydrophilic to super hydrophobic surfaces K Tsougeni, N Vourdas, A Tserepi, E Gogolides, C Cardinaud Langmuir 25 (19), 11748-11759, 2009 | 397 | 2009 |
| Spectroscopic determination of the structure of amorphous nitrogenated carbon films S Bhattacharyya, C Cardinaud, G Turban Journal of applied physics 83 (8), 4491-4500, 1998 | 268 | 1998 |
| Plasma etching: principles, mechanisms, application to micro-and nano-technologies C Cardinaud, MC Peignon, PY Tessier Applied Surface Science 164 (1-4), 72-83, 2000 | 267 | 2000 |
| In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process J Pereira, LE Pichon, R Dussart, C Cardinaud, CY Duluard, ... Applied Physics Letters 94 (7), 2009 | 104 | 2009 |
| Characterization of silicon dioxide films deposited at low pressure and temperature in a helicon diffusion reactor C Charles, G Giroult‐Matlakowski, RW Boswell, A Goullet, G Turban, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 11 (6 …, 1993 | 80 | 1993 |
| Polyhedral oligomeric silsesquioxane (POSS) based resists: material design challenges and lithographic evaluation at 157 nm E Tegou, V Bellas, E Gogolides, P Argitis, D Eon, G Cartry, C Cardinaud Chemistry of materials 16 (13), 2567-2577, 2004 | 76 | 2004 |
| RF sputtered amorphous chalcogenide thin films for surface enhanced infrared absorption spectroscopy F Verger, V Nazabal, F Colas, P Němec, C Cardinaud, E Baudet, ... Optical Materials Express 3 (12), 2112-2131, 2013 | 61 | 2013 |
| Global model and diagnostic of a low-pressure SF6/Ar inductively coupled plasma L Lallement, A Rhallabi, C Cardinaud, MC Peignon-Fernandez, LL Alves Plasma Sources Science and Technology 18 (2), 025001, 2009 | 58 | 2009 |
| Analyse XPS des surfaces de Si et SiO2 exposées aux plasmas de CHF3 et CHF3—C2F6. Polymérisation et gravure C Cardinaud, A Rhounna, G Turban, B Grolleau Revue de physique appliquée 24 (3), 309-321, 1989 | 55 | 1989 |
| Structural analysis of RF sputtered Ge-Sb-Se thin films by Raman and X-ray photoelectron spectroscopies E Baudet, C Cardinaud, A Girard, E Rinnert, K Michel, B Bureau, ... Journal of Non-Crystalline Solids 444, 64-72, 2016 | 53 | 2016 |
| Studies on structural properties of amorphous nitrogenated carbon films from electron energy loss, ellipsometry, Auger electron spectroscopy, and electron-spin resonance S Bhattacharyya, C Vallee, C Cardinaud, O Chauvet, G Turban Journal of applied physics 85 (4), 2162-2169, 1999 | 52 | 1999 |
| Fluorine-based plasmas: main features and application in micro-and nanotechnology and in surface treatment C Cardinaud Comptes Rendus Chimie 21 (8), 723-739, 2018 | 49 | 2018 |
| Experimental design approach for deposition optimization of RF sputtered chalcogenide thin films devoted to environmental optical sensors E Baudet, M Sergent, P Němec, C Cardinaud, E Rinnert, K Michel, ... Scientific Reports 7 (1), 3500, 2017 | 46 | 2017 |
| HiPIMS ion energy distribution measurements in reactive mode PY Jouan, L Le Brizoual, M Ganciu, C Cardinaud, S Tricot, MA Djouadi IEEE transactions on plasma science 38 (11), 3089-3094, 2010 | 46 | 2010 |
| Plasma etching of poly (dimethylsiloxane): Roughness formation, mechanism, control, and application in the fabrication of microfluidic structures ME Vlachopoulou, G Kokkoris, C Cardinaud, E Gogolides, A Tserepi Plasma Processes and Polymers 10 (1), 29-40, 2013 | 43 | 2013 |
| Etching studies of silica glasses in SF6/Ar inductively coupled plasmas: Implications for microfluidic devices fabrication L Lallement, C Gosse, C Cardinaud, MC Peignon-Fernandez, A Rhallabi Journal of Vacuum Science & Technology A 28 (2), 277-286, 2010 | 43 | 2010 |
| Electronic and optical investigation of hydrogenated amorphous carbon (aC: H) by X-ray photoemission spectroscopy and spectroscopic ellipsometry J Hong, S Lee, C Cardinaud, G Turban Journal of non-crystalline solids 265 (1-2), 125-132, 2000 | 42 | 2000 |
| Enhanced performance of PMOS MUGFET via integration of conformal plasma-doped source/drain extensions D Lenoble, K Anil, A De Keersgieter, P Eybens, N Collaert, R Rooyackers, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 168-169, 2006 | 40 | 2006 |
| Influence of the gas mixture on the reactive ion etching of InP in -H2 plasmas Y Feurprier, C Cardinaud, G Turban Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1997 | 39 | 1997 |
| Inductively coupled plasma etching of HgCdTe using a CH4-based mixture E Laffosse, J Baylet, JP Chamonal, G Destefanis, G Cartry, C Cardinaud Journal of electronic materials 34, 740-745, 2005 | 37 | 2005 |
