| Strain-related phenomena in GaN thin films C Kisielowski, J Krüger, S Ruvimov, T Suski, JW Ager III, E Jones, ... Physical review B 54 (24), 17745, 1996 | 950 | 1996 |
| Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy OH Nam, MD Bremser, TS Zheleva, RF Davis Applied Physics Letters 71 (18), 2638-2640, 1997 | 851 | 1997 |
| Dislocation density reduction via lateral epitaxy in selectively grown GaN structures TS Zheleva, OH Nam, MD Bremser, RF Davis Applied Physics Letters 71 (17), 2472-2474, 1997 | 669 | 1997 |
| III-V nitrides for electronic and optoelectronic applications RF Davis Proceedings of the IEEE 79 (5), 702-712, 1991 | 609 | 1991 |
| Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide RF Davis, CH Carter Jr, CE Hunter US Patent App. 07/594,856, 1995 | 602* | 1995 |
| Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide RF Davis, G Kelner, M Shur, JW Palmour, JA Edmond Proceedings of the IEEE 79 (5), 677-701, 1991 | 572 | 1991 |
| A critical review of ohmic and rectifying contacts for silicon carbide LM Porter, RF Davis Materials Science and Engineering: B 34 (2-3), 83-105, 1995 | 560 | 1995 |
| Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy MJ Paisley, Z Sitar, JB Posthill, RF Davis Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (3 …, 1989 | 491 | 1989 |
| Gold Schottky contacts on oxygen plasma-treated, n-type BJ Coppa, RF Davis, RJ Nemanich Applied Physics Letters 82 (3), 400-402, 2003 | 450 | 2003 |
| Cleaning of AlN and GaN surfaces SW King, JP Barnak, MD Bremser, KM Tracy, C Ronning, RF Davis, ... Journal of Applied Physics 84 (9), 5248-5260, 1998 | 362 | 1998 |
| Epitaxial growth and characterization of β‐SiC thin films P Liaw, RF Davis Journal of the Electrochemical Society 132 (3), 642, 1985 | 352 | 1985 |
| GaN thin films deposited via organometallic vapor phase epitaxy on α (6H)-SiC (0001) using high-temperature monocrystalline AlN buffer layers TW Weeks Jr, MD Bremser, KS Ailey, E Carlson, WG Perry, RF Davis Applied physics letters 67 (3), 401-403, 1995 | 332 | 1995 |
| Diamond films and coatings RF Davis Noyes Publications(USA), 1993,, 435, 1993 | 313 | 1993 |
| Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer RF Davis, OH Nam, T Zheleva, MD Bremser US Patent 6,051,849, 2000 | 291 | 2000 |
| Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates HS Kong, JT Glass, RF Davis Journal of applied physics 64 (5), 2672-2679, 1988 | 291 | 1988 |
| Observation of a negative electron affinity for heteroepitaxial AlN on α (6H)‐SiC (0001) MC Benjamin, C Wang, RF Davis, RJ Nemanich Applied physics letters 64 (24), 3288-3290, 1994 | 263 | 1994 |
| Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide RF Davis, Z Sitar, BE Williams, HS Kong, HJ Kim, JW Palmour, ... Materials Science and Engineering: B 1 (1), 77-104, 1988 | 261 | 1988 |
| Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates KJ Linthicum, T Gehrke, DB Thomson, EP Carlson, P Rajagopal, ... US Patent 6,177,688, 2001 | 255 | 2001 |
| Pendeoepitaxy of gallium nitride thin films K Linthicum, T Gehrke, D Thomson, E Carlson, P Rajagopal, T Smith, ... Applied Physics Letters 75 (2), 196-198, 1999 | 253 | 1999 |
| Structural TEM study of nonpolar -plane gallium nitride grown on -SiC by organometallic vapor phase epitaxy DN Zakharov, Z Liliental-Weber, B Wagner, ZJ Reitmeier, EA Preble, ... Physical Review B 71 (23), 235334, 2005 | 252 | 2005 |
