Ben Kaczer
Ben Kaczer
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα imec.be
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The paradigm shift in understanding the bias temperature instability: From reaction–diffusion to switching oxide traps
T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ...
IEEE Transactions on Electron Devices 58 (11), 3652-3666, 2011
4392011
Origin of NBTI variability in deeply scaled pFETs
B Kaczer, T Grasser, PJ Roussel, J Franco, R Degraeve, LA Ragnarsson, ...
2010 IEEE International Reliability Physics Symposium, 26-32, 2010
3282010
The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability
T Grasser, H Reisinger, PJ Wagner, F Schanovsky, W Gös, B Kaczer
2010 IEEE International Reliability Physics Symposium, 16-25, 2010
3152010
A two-stage model for negative bias temperature instability
T Grasser, B Kaczer, W Goes, T Aichinger, P Hehenberger, M Nelhiebel
2009 IEEE international reliability physics symposium, 33-44, 2009
2562009
Ubiquitous relaxation in BTI stressing—New evaluation and insights
B Kaczer, T Grasser, J Roussel, J Martin-Martinez, R O'Connor, ...
2008 IEEE International Reliability Physics Symposium, 20-27, 2008
2482008
High-k dielectrics for future generation memory devices
JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ...
Microelectronic engineering 86 (7-9), 1789-1795, 2009
2342009
Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability
B Kaczer, R Degraeve, M Rasras, K Van de Mieroop, PJ Roussel, ...
IEEE Transactions on Electron Devices 49 (3), 500-506, 2002
2282002
Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification
B Kaczer, V Arkhipov, R Degraeve, N Collaert, G Groeseneken, ...
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings …, 2005
1922005
Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction
R Degraeve, B Kaczer, G Groeseneken
Microelectronics Reliability 39 (10), 1445-1460, 1999
1871999
The universality of NBTI relaxation and its implications for modeling and characterization
T Grasser, W Gos, V Sverdlov, B Kaczer
2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007
1862007
Analytic modeling of the bias temperature instability using capture/emission time maps
T Grasser, PJ Wagner, H Reisinger, T Aichinger, G Pobegen, M Nelhiebel, ...
2011 International Electron Devices Meeting, 27.4. 1-27.4. 4, 2011
1842011
Emerging yield and reliability challenges in nanometer CMOS technologies
G Gielen, P De Wit, E Maricau, J Loeckx, J Martin-Martinez, B Kaczer, ...
Proceedings of the conference on Design, automation and test in Europe, 1322 …, 2008
1672008
AC NBTI studied in the 1 Hz--2 GHz range on dedicated on-chip CMOS circuits
R Fernandez, B Kaczer, A Nackaerts, S Demuynck, R Rodriguez, M Nafria, ...
2006 International Electron Devices Meeting, 1-4, 2006
1602006
Atomistic approach to variability of bias-temperature instability in circuit simulations
B Kaczer, S Mahato, VV de Almeida Camargo, M Toledano-Luque, ...
2011 International Reliability Physics Symposium, XT. 3.1-XT. 3.5, 2011
1592011
Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors
T Grasser, H Reisinger, PJ Wagner, B Kaczer
Physical Review B 82 (24), 245318, 2010
1562010
Simultaneous extraction of recoverable and permanent components contributing to bias-temperature instability
T Grasser, B Kaczer, P Hehenberger, W Gos, R O'connor, H Reisinger, ...
2007 IEEE International Electron Devices Meeting, 801-804, 2007
1382007
High performance Ge pMOS devices using a Si-compatible process flow
P Zimmerman, G Nicholas, B De Jaeger, B Kaczer, A Stesmans, ...
2006 International Electron Devices Meeting, 1-4, 2006
1372006
Statistics of multiple trapped charges in the gate oxide of deeply scaled MOSFET devices—Application to NBTI
B Kaczer, PJ Roussel, T Grasser, G Groeseneken
IEEE Electron Device Letters 31 (5), 411-413, 2010
1342010
Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise
T Grasser, H Reisinger, W Goes, T Aichinger, P Hehenberger, PJ Wagner, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
1322009
Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications
R Degraeve, B Kaczer, A De Keersgieter, G Groeseneken
2001 IEEE International Reliability Physics Symposium Proceedings. 39th …, 2001
1292001
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