Augustinas Galeckas
Augustinas Galeckas
SMN / Department of Physics, University of Oslo, Norway
Verified email at
Cited by
Cited by
Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in
J Linnros, N Lalic, A Galeckas, V Grivickas
Journal of Applied Physics 86 (11), 6128-6134, 1999
Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias
A Galeckas, J Linnros, P Pirouz
Applied physics letters 81 (5), 883-885, 2002
Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation
KE Knutsen, A Galeckas, A Zubiaga, F Tuomisto, GC Farlow, ...
Physical Review B 86 (12), 121203, 2012
Auger recombination in 4H-SiC: Unusual temperature behavior
A Galeckas, J Linnros, V Grivickas, U Lindefelt, C Hallin
Applied Physics Letters 71 (22), 3269-3271, 1997
Recombination-induced stacking faults: evidence for a general mechanism in hexagonal SiC
A Galeckas, J Linnros, P Pirouz
Physical review letters 96 (2), 025502, 2006
Optical characterization of excess carrier lifetime and surface recombination in 4H/6H–SiC
A Galeckas, J Linnros, M Frischholz, V Grivickas
Applied Physics Letters 79 (3), 365-367, 2001
Deep level related photoluminescence in ZnMgO
M Trunk, V Venkatachalapathy, A Galeckas, AY Kuznetsov
Applied Physics Letters 97 (21), 211901, 2010
Time-resolved photoluminescence characterization of nm-sized silicon crystallites in SiO2
J Linnros, A Galeckas, N Lalic, V Grivickas
Thin Solid Films 297 (1-2), 167-170, 1997
Understanding phase separation in ZnCdO by a combination of structural and optical analysis
V Venkatachalapathy, A Galeckas, M Trunk, T Zhang, A Azarov, ...
Physical Review B 83 (12), 125315, 2011
Combined photoluminescence-imaging and deep-level transient spectroscopy of recombination processes at stacking faults in
A Galeckas, A Hallén, S Majdi, J Linnros, P Pirouz
Physical Review B 74 (23), 233203, 2006
Influence of graphene synthesizing techniques on the photocatalytic performance of graphene–TiO 2 nanocomposites
R Sellappan, J Sun, A Galeckas, N Lindvall, A Yurgens, AY Kuznetsov, ...
Physical Chemistry Chemical Physics 15 (37), 15528-15537, 2013
Application of optical emission microscopy for reliability studies in 4H–SiC diodes
A Galeckas, J Linnros, B Breitholtz, H Bleichner
Journal of Applied Physics 90 (2), 980-984, 2001
Precursor-dependent blue-green photoluminescence emission of ZnO nanoparticles
E Rauwel, A Galeckas, P Rauwel, MF Sunding, H Fjellvåg
The Journal of Physical Chemistry C 115 (51), 25227-25233, 2011
Fundamental band edge absorption in nominally undoped and doped 4 H‐Si C
P Grivickas, V Grivickas, J Linnros, A Galeckas
Journal of applied physics 101 (12), 123521, 2007
Unusual Photoluminescence of CaHfO3 and SrHfO3 Nanoparticles
E Rauwel, A Galeckas, P Rauwel, H Fjellvåg
Advanced Functional Materials 22 (6), 1174-1179, 2012
Improvement of an X-ray imaging detector based on a scintillating guides screen
X Badel, A Galeckas, J Linnros, P Kleimann, C Fröjdh, CS Petersson
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2002
One step synthesis of pure cubic and monoclinic HfO2 nanoparticles: Correlating the structure to the electronic properties of the two polymorphs
P Rauwel, E Rauwel, C Persson, MF Sunding, A Galeckas
Journal of Applied Physics 112 (10), 104107, 2012
Investigation of surface recombination and carrier lifetime in 4H/6H-SiC
A Galeckas, J Linnros, M Frischholz, K Rottner, N Nordell, S Karlsson, ...
Materials Science and Engineering: B 61, 239-243, 1999
Temperature Dependence of the Absorption Coefficient in 4H‐and 6H‐Silicon Carbide at 355 nm Laser Pumping Wavelength
A Galeckas, P Grivickas, V Grivickas, V Bikbajevas, J Linnros
physica status solidi (a) 191 (2), 613-620, 2002
Evaluation of Auger recombination rate in 4H-SiC
A Galeckas, J Linnros, V Grivickas, U Lindefelt, C Hallin
Materials Science Forum 264 (268), 533, 1998
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