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Loke Wan Khai
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Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth
Y Dong, W Wang, S Xu, D Lei, X Gong, X Guo, H Wang, SY Lee, WK Loke, ...
Optics express 25 (14), 15818-15827, 2017
952017
Comparison of nitrogen compositions in the as-grown on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy
WJ Fan, SF Yoon, TK Ng, SZ Wang, WK Loke, R Liu, A Wee
Applied physics letters 80 (22), 4136-4138, 2002
852002
Suppression of dark current in germanium-tin on silicon pin photodiode by a silicon surface passivation technique
Y Dong, W Wang, D Lei, X Gong, Q Zhou, SY Lee, WK Loke, SF Yoon, ...
Optics express 23 (14), 18611-18619, 2015
792015
Growth of on vicinal Ge surface using low-temperature migration-enhanced epitaxy
H Tanoto, SF Yoon, WK Loke, EA Fitzgerald, C Dohrman, B Narayanan, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
772006
Rate Equations for 1.3-m Dots-Under-a-Well and Dots-in-a-Well Self-Assembled InAs–GaAs Quantum-Dot Lasers
CZ Tong, SF Yoon, CY Ngo, CY Liu, WK Loke
IEEE journal of quantum electronics 42 (11), 1175-1183, 2006
712006
Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics
BW Jia, KH Tan, WK Loke, S Wicaksono, KH Lee, SF Yoon
ACS Photonics 5 (4), 1512-1520, 2018
612018
Rapid thermal annealing of grown by radio-frequency plasma assisted molecular beam epitaxy and its effect on photoluminescence
WK Loke, SF Yoon, SZ Wang, TK Ng, WJ Fan
Journal of applied physics 91 (8), 4900-4903, 2002
602002
Germanium-tin on Si avalanche photodiode: device design and technology demonstration
Y Dong, W Wang, X Xu, X Gong, D Lei, Q Zhou, Z Xu, WK Loke, SF Yoon, ...
IEEE Transactions on Electron Devices 62 (1), 128-135, 2014
582014
Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range
W Wang, Y Dong, SY Lee, WK Loke, D Lei, SF Yoon, G Liang, X Gong, ...
Optics express 25 (16), 18502-18507, 2017
542017
Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell
KH Tan, S Wicaksono, WK Loke, D Li, SF Yoon, EAA Fitzgerald, ...
Journal of Crystal Growth 335 (1), 66-69, 2011
442011
High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform
W Wang, D Lei, YC Huang, KH Lee, WK Loke, Y Dong, S Xu, CS Tan, ...
Optics express 26 (8), 10305-10314, 2018
362018
Incorporation of N into GaAsN under N overpressure and underpressure conditions
S Zhongzhe, YS Fatt, YK Chuin, LW Khai, F Weijun, W Shanzhong, ...
Journal of applied physics 94 (2), 1069-1073, 2003
362003
High gain AlGaAs∕ GaAs heterojunction bipolar transistor fabricated on SiGe∕ Si substrate
KL Lew, SF Yoon, WK Loke, H Tanoto, CL Dohrman, DM Isaacson, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
322007
Determination of nitrogen composition in GaNxas1− x epilayer on GaAs
WJ Fan, SF Yoon, WK Cheah, WK Loke, TK Ng, SZ Wang, R Liu, A Wee
Journal of crystal growth 268 (3-4), 470-474, 2004
322004
Defect-induced trap-assisted tunneling current in GaInNAs grown on GaAs substrate
WK Loke, SF Yoon, S Wicaksono, KH Tan, KL Lew
Journal of Applied Physics 102 (5), 2007
312007
High-speed picosecond pulse response GaNAsSb pin photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy
KH Tan, SF Yoon, WK Loke, S Wicaksono, KL Lew, A Stöhr, O Ecin, ...
Applied physics letters 90 (18), 2007
312007
Degradation of subcells and tunnel junctions during growth of GaInP/Ga (In) As/GaNAsSb/Ge 4‐junction solar cells
I García, M Ochoa, I Lombardero, L Cifuentes, M Hinojosa, P Caño, ...
Progress in Photovoltaics: Research and Applications 25 (11), 887-895, 2017
302017
Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature
TK Ng, SF Yoon, SZ Wang, WK Loke, WJ Fan
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
302002
Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength
Y Dong, W Wang, SY Lee, D Lei, X Gong, WK Loke, SF Yoon, G Liang, ...
Semiconductor Science and Technology 31 (9), 095001, 2016
272016
An investigation of growth temperature on the surface morphology and optical properties of 1.3 µm InAs/InGaAs/GaAs quantum dot structures
CY Ngo, SF Yoon, CZ Tong, WK Loke, SJ Chua
Nanotechnology 18 (36), 365708, 2007
272007
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