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Greg Yeric
Greg Yeric
Cerfe Labs
Verified email at cerfelabs.com - Homepage
Title
Cited by
Cited by
Year
ASAP7: A 7-nm finFET predictive process design kit
LT Clark, V Vashishtha, L Shifren, A Gujja, S Sinha, B Cline, ...
Microelectronics Journal 53, 105-115, 2016
4842016
Exploring sub-20nm FinFET design with predictive technology models
S Sinha, G Yeric, V Chandra, B Cline, Y Cao
Proceedings of the 49th Annual Design Automation Conference, 283-288, 2012
3702012
Physically-based models for effective mobility and local-field mobility of electrons in MOS inversion layers
H Shin, GM Yeric, AF Tasch, CM Maziar
Solid-State Electronics 34 (6), 545-552, 1991
1251991
Correlated electron switch programmable fabric
L Shifren, G Yeric, S Sinha, B Cline, V Chandra
US Patent 10,056,143, 2018
922018
Device and technology implications of the Internet of Things
R Aitken, V Chandra, J Myers, B Sandhu, L Shifren, G Yeric
2014 symposium on VLSI technology (VLSI-technology): digest of technical …, 2014
842014
Self-aligned double patterning aware pin access and standard cell layout co-optimization
X Xu, B Cline, G Yeric, B Yu, DZ Pan
Proceedings of the 2014 on International symposium on physical design, 101-108, 2014
832014
Moore's law at 50: Are we planning for retirement?
G Yeric
2015 IEEE International Electron Devices Meeting (IEDM), 1.1. 1-1.1. 8, 2015
782015
Cascade2D: A design-aware partitioning approach to monolithic 3D IC with 2D commercial tools
K Chang, S Sinha, B Cline, R Southerland, M Doherty, G Yeric, SK Lim
2016 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), 1-8, 2016
632016
Standard cell library design and optimization methodology for ASAP7 PDK
X Xu, N Shah, A Evans, S Sinha, B Cline, G Yeric
2017 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), 999 …, 2017
502017
Replacing copper interconnects with graphene at a 7-nm node
NC Wang, S Sinha, B Cline, CD English, G Yeric, E Pop
2017 IEEE International Interconnect Technology Conference (IITC), 1-3, 2017
432017
Design benchmarking to 7nm with FinFET predictive technology models
S Sinha, B Cline, G Yeric, V Chandra, Y Cao
Proceedings of the 2012 ACM/IEEE international symposium on Low power …, 2012
392012
Physical design and FinFETs
R Aitken, G Yeric, B Cline, S Sinha, L Shifren, I Iqbal, V Chandra
Proceedings of the 2014 on International symposium on physical design, 65-68, 2014
382014
32-bit processor core at 5-nm technology: Analysis of transistor and interconnect impact on VLSI system performance
CS Lee, B Cline, S Sinha, G Yeric, HSP Wong
2016 IEEE international electron devices meeting (IEDM), 28.3. 1-28.3. 4, 2016
372016
A universal MOSFET mobility degradation model for circuit simulation
GM Yeric, AF Tasch, SK Banerjee
IEEE transactions on computer-aided design of integrated circuits and …, 1990
361990
Predictive simulation and benchmarking of Si and Ge pMOS FinFETs for future CMOS technology
L Shifren, R Aitken, AR Brown, V Chandra, B Cheng, C Riddet, ...
IEEE Transactions on Electron Devices 61 (7), 2271-2277, 2014
322014
The past present and future of design-technology co-optimization
G Yeric, B Cline, S Sinha, D Pietromonaco, V Chandra, R Aitken
Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, 1-8, 2013
292013
Asymmetric correlated electron switch operation
L Shifren, G Yeric
US Patent 9,755,146, 2017
282017
Power benefit study of monolithic 3D IC at the 7nm technology node
K Chang, K Acharya, S Sinha, B Cline, G Yeric, SK Lim
2015 IEEE/ACM International Symposium on Low Power Electronics and Design …, 2015
272015
Simulation study of the impact of quantum confinement on the electrostatically driven performance of n-type nanowire transistors
Y Wang, T Al-Ameri, X Wang, VP Georgiev, E Towie, SM Amoroso, ...
IEEE Transactions on Electron Devices 62 (10), 3229-3236, 2015
262015
A 65-nm random and systematic yield ramp infrastructure utilizing a specialized addressable array with integrated analysis software
M Karthikeyan, S Fox, W Cote, G Yeric, M Hall, J Garcia, B Mitchell, E Wolf, ...
IEEE transactions on semiconductor manufacturing 21 (2), 161-168, 2008
252008
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