| Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn J Rathore, A Nanwani, S Mukherjee, S Das, O Moutanabbir, S Mahapatra Journal of Physics D: Applied Physics 54 (18), 185105, 2021 | 24 | 2021 |
| Dislocation density and strain-relaxation in Ge1− xSnx layers grown on Ge/Si (0 0 1) by low-temperature molecular beam epitaxy KR Khiangte, JS Rathore, V Sharma, S Bhunia, S Das, RS Fandan, ... Journal of Crystal Growth 470, 135-142, 2017 | 21 | 2017 |
| Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures KR Khiangte, JS Rathore, S Das, RS Pokharia, J Schmidt, HJ Osten, ... Journal of Applied Physics 124 (6), 2018 | 16 | 2018 |
| Engineering strain relaxation of GeSn epilayers on Ge/Si (001) substrates KR Khiangte, JS Rathore, V Sharma, A Laha, S Mahapatra Solid State Communications 284, 88-92, 2018 | 12 | 2018 |
| Excimer laser annealing: An alternative route and its optimisation to effectively activate Si dopants in AlN films grown by plasma assisted molecular beam epitaxy K Ghosh, P Busi, S Das, JS Rathore, A Laha Materials Research Bulletin 97, 300-305, 2018 | 11 | 2018 |
| Self-assembled Sn nanocrystals as the floating gate of nonvolatile flash memory JS Rathore, R Fandan, S Srivastava, KR Khiangte, S Das, U Ganguly, ... ACS Applied Electronic Materials 1 (9), 1852-1858, 2019 | 10 | 2019 |
| Tuning the effective band gap and finding the optimal growth condition of InN thin films on GaN/sapphire substrates by plasma assisted molecular beam epitaxy technique K Ghosh, JS Rathore, A Laha Superlattices and Microstructures 101, 405-414, 2017 | 9 | 2017 |
| Wafer-scale all-epitaxial GeSn-on-insulator on Si (1 1 1) by molecular beam epitaxy KR Khiangte, JS Rathore, J Schmidt, HJ Osten, A Laha, S Mahapatra Journal of Physics D: Applied Physics 51 (32), 32LT01, 2018 | 7 | 2018 |
| On the correlation of growth, structural and electrical properties of epitaxial Ge grown on Si by solid source molecular beam epitaxy S Das, KR Khiangte, RS Fandan, JS Rathore, RS Pokharia, S Mahapatra, ... Current Applied Physics 17 (3), 327-332, 2017 | 6 | 2017 |
| Formation of antimonene nanoribbons by molecular beam epitaxy J Rathore, S Mahapatra 2D Materials 7 (4), 045003, 2020 | 5 | 2020 |
| Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on-Si (111), grown by molecular beam epitaxy RS Pokharia, KR Khiangte, JS Rathore, J Schmidt, HJ Osten, A Laha, ... Optical Components and Materials XVI 10914, 220-226, 2019 | 2 | 2019 |
| Interlayer Engineering in GeSn Gate Stacks for Advanced CMOS S Kothari, JS Rathore, KR Khiangte, S Mahapatra, S Lodha 2018 4th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2018 | | 2018 |
| Epitaxy photonic and memory devices using sn and ge 1 x sn x alloy JS Rathore Mumbai, 0 | | |
