| Enhanced Inversion Mobility on 4H-SiC Using Phosphorus and Nitrogen Interface Passivation G Liu, AC Ahyi, Y Xu, T Isaacs-Smith, YK Sharma, JR Williams, ... IEEE Electron Device Letters 34 (2), 181-183, 2013 | 129 | 2013 |
| Effects of Mg on the electrical characteristics and thermal stability of MgxZn1− xO thin film transistors CJ Ku, Z Duan, PI Reyes, Y Lu, Y Xu, CL Hsueh, E Garfunkel Applied Physics Letters 98 (12), 2011 | 127 | 2011 |
| High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer YK Sharma, AC Ahyi, T Isaacs-Smith, A Modic, M Park, Y Xu, ... IEEE Electron Device Letters 34 (2), 175-177, 2013 | 94 | 2013 |
| Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector P Ivanoff Reyes, CJ Ku, Z Duan, Y Xu, E Garfunkel, Y Lu Applied Physics Letters 101 (3), 2012 | 93 | 2012 |
| Effects of Mg composition on open circuit voltage of Cu2O–MgxZn1− xO heterojunction solar cells Z Duan, A Du Pasquier, Y Lu, Y Xu, E Garfunkel Solar energy materials and solar cells 96, 292-297, 2012 | 89 | 2012 |
| Atomic state and characterization of nitrogen at the SiC/SiO2 interface Y Xu, X Zhu, HD Lee, C Xu, SM Shubeita, AC Ahyi, Y Sharma, ... Journal of Applied Physics 115 (3), 2014 | 78 | 2014 |
| Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation Z Chen, Y Xu, E Garfunkel, LC Feldman, T Buyuklimanli, W Ou, J Serfass, ... Applied surface science 317, 593-597, 2014 | 30 | 2014 |
| Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces A Modic, YK Sharma, Y Xu, G Liu, AC Ahyi, JR Williams, LC Feldman, ... Journal of electronic materials 43, 857-862, 2014 | 25 | 2014 |
| Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery G Liu, Y Xu, C Xu, A Basile, F Wang, S Dhar, E Conrad, P Mooney, ... Applied Surface Science 324, 30-34, 2015 | 18 | 2015 |
| Fluorine-free tungsten films as low resistance liners for tungsten fill applications J Bakke, Y Lei, Y Xu, K Daito, X Fu, G Jian, K Wu, R Hung, R Jakkaraju, ... 2016 IEEE International Interconnect Technology Conference/Advanced …, 2016 | 16 | 2016 |
| Methods for forming low-resistance contacts through integrated process flow systems Y Lei, V Banthia, K Wu, X Fu, Y Xu, K Daito, F Ma, P Agarwal, CC Lin, ... US Patent 9,947,578, 2018 | 14 | 2018 |
| Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC (0001) interface Y Xu, C Xu, G Liu, HD Lee, SM Shubeita, C Jiao, A Modic, AC Ahyi, ... Journal of Applied Physics 118 (23), 2015 | 10 | 2015 |
| Improved stability of 4H SiC-MOS devices after phosphorous passivation with etching process YK Sharma, Y Xu, MR Jennings, C Fisher, P Mawby, LC Feldman, ... International Journal of Fundamental Physical Sciences (IJFPS) 4 (2), 37-42, 2014 | 8 | 2014 |
| Method for forming a metal gapfill CEN Xi, F Ma, K Wu, Y Lei, K Daito, Y Xu, V Banthia, M Chang, H Ren, ... US Patent 11,355,391, 2022 | 5 | 2022 |
| Methods To Selectively Deposit Corrosion-Free Metal Contacts Y Xu, F Ma, Y Lei, K Daito, V Banthia, K Wu, JY Wang, M Chang US Patent App. 15/817,985, 2018 | 5 | 2018 |
| Process integration approach for selective metal via fill S You, H Ren, M Naik, Y Xu, F Chen US Patent 11,164,780, 2021 | 4 | 2021 |
| Methods for depositing semiconductor films Y Xu, T Kuratomi, AV Gelatos, V Banthia, M Chang, K Daito US Patent 10,535,527, 2020 | 3 | 2020 |
| Advancements in SiC power devices using novel interface passivation processes YK Sharma, AC Ahyi, T Issacs-Smith, A Modic, Y Xu, E Garfunkel, ... Physics of Semiconductor Devices: 17th International Workshop on the Physics …, 2014 | 3 | 2014 |
| The Effects of Phosphorus at the SiO2/4H-SiC Interface YK Sharma, AC Ahyi, T Issacs-Smith, X Shen, ST Pantelides, XG Zhu, ... Materials Science Forum 717, 743-746, 2012 | 3 | 2012 |
| Thin PSG process for 4H-SiC MOSFET YK Sharma, AC Ahyi, T Isaacs-Smith, A Modic, Y Xu, E Granfukel, ... Materials Science Forum 778, 513-516, 2014 | 2 | 2014 |
Leonard FeldmanProfessor of Physics and Materials ScienceVerified email at rutgers.edu
