| Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition S Suihkonen, T Lang, O Svensk, J Sormunen, PT Törmä, M Sopanen, ... Journal of crystal growth 300 (2), 324-329, 2007 | 48 | 2007 |
| Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs PT Törmä, O Svensk, M Ali, S Suihkonen, M Sopanen, MA Odnoblyudov, ... Journal of Crystal Growth 310 (23), 5162-5165, 2008 | 45 | 2008 |
| Photo-thermal chemical vapor deposition of graphene on copper J Riikonen, W Kim, C Li, O Svensk, S Arpiainen, M Kainlauri, H Lipsanen Carbon 62, 43-50, 2013 | 44 | 2013 |
| Effect of growth conditions on electrical properties of Mg-doped p-GaN O Svensk, S Suihkonen, T Lang, H Lipsanen, M Sopanen, ... Journal of crystal growth 298, 811-814, 2007 | 36 | 2007 |
| Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer O Svensk, PT Törmä, S Suihkonen, M Ali, H Lipsanen, M Sopanen, ... Journal of Crystal Growth 310 (23), 5154-5157, 2008 | 32 | 2008 |
| The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency S Suihkonen, O Svensk, T Lang, H Lipsanen, MA Odnoblyudov, ... Journal of crystal growth 298, 740-743, 2007 | 29 | 2007 |
| Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning M Ali, O Svensk, L Riuttanen, M Kruse, S Suihkonen, AE Romanov, ... Semiconductor Science and Technology 27 (8), 082002, 2012 | 26 | 2012 |
| Void shape control in GaN re-grown on hexagonally patterned mask-less GaN M Ali, AE Romanov, S Suihkonen, O Svensk, PT Törmä, M Sopanen, ... Journal of Crystal Growth 315 (1), 188-191, 2011 | 25 | 2011 |
| InGaN-based 405 nm near-ultraviolet light emitting diodes on pillar patterned sapphire substrates PT Törmä, M Ali, O Svensk, S Suihkonen, M Sopanen, H Lipsanen, ... CrystEngComm 12 (10), 3152-3156, 2010 | 23 | 2010 |
| Diffusion injected multi-quantum well light-emitting diode structure L Riuttanen, P Kivisaari, H Nykänen, O Svensk, S Suihkonen, J Oksanen, ... Applied Physics Letters 104 (8), 2014 | 22 | 2014 |
| Diffusion injection in a buried multiquantum well light-emitting diode structure L Riuttanen, P Kivisaari, O Svensk, J Oksanen, S Suihkonen IEEE Transactions on Electron Devices 62 (3), 902-908, 2015 | 17 | 2015 |
| Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN M Ali, AE Romanov, S Suihkonen, O Svensk, S Sintonen, M Sopanen, ... Journal of crystal growth 344 (1), 59-64, 2012 | 17 | 2012 |
| MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures S Suihkonen, O Svensk, PT Törmä, M Ali, M Sopanen, H Lipsanen, ... Journal of crystal growth 310 (7-9), 1777-1780, 2008 | 17 | 2008 |
| Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels VF Agekyan, EV Borisov, LE Vorobjev, GA Melentyev, H Nykänen, ... Physics of the Solid State 57, 787-793, 2015 | 15 | 2015 |
| Patterning of sapphire/GaN substrates S Suihkonen, M Ali, O Svensk, S Sintonen, M Sopanen, H Lipsanen, ... physica status solidi c 8 (5), 1509-1512, 2011 | 15 | 2011 |
| An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE PT Törmä, M Ali, O Svensk, S Sintonen, P Kostamo, S Suihkonen, ... Physica B: Condensed Matter 404 (23-24), 4911-4915, 2009 | 15 | 2009 |
| Electrical injection to contactless near-surface InGaN quantum well L Riuttanen, P Kivisaari, O Svensk, J Oksanen, S Suihkonen Applied Physics Letters 107 (5), 2015 | 14 | 2015 |
| Stress distribution of GaN layer grown on micro-pillar patterned GaN templates S Nagarajan, O Svensk, M Ali, G Naresh-Kumar, C Trager-Cowan, ... Applied Physics Letters 103 (1), 2013 | 14 | 2013 |
| Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs PT Törmä, O Svensk, M Ali, S Suihkonen, M Sopanen, MA Odnoblyudov, ... Solid-state electronics 53 (2), 166-169, 2009 | 14 | 2009 |
| Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheres K Kolari, T Vehmas, O Svensk, P Törmä, T Aalto Physica Scripta 2010 (T141), 014017, 2010 | 10 | 2010 |
