Jan Linnros
Jan Linnros
Unknown affiliation
Verified email at kth.se
TitleCited byYear
Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in
J Linnros, N Lalic, A Galeckas, V Grivickas
Journal of Applied Physics 86 (11), 6128-6134, 1999
3741999
Surface charge sensitivity of silicon nanowires: Size dependence
N Elfström, R Juhasz, I Sychugov, T Engfeldt, AE Karlström, J Linnros
Nano Letters 7 (9), 2608-2612, 2007
2552007
Photoluminescence spectroscopy of single silicon quantum dots
J Valenta, R Juhasz, J Linnros
Applied Physics Letters 80 (6), 1070-1072, 2002
2172002
Silicon nanoribbons for electrical detection of biomolecules
N Elfström, AE Karlström, J Linnros
Nano letters 8 (3), 945-949, 2008
2072008
Narrow luminescence linewidth of a silicon quantum dot
I Sychugov, R Juhasz, J Valenta, J Linnros
Physical review letters 94 (8), 087405, 2005
2042005
Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias
A Galeckas, J Linnros, P Pirouz
Applied physics letters 81 (5), 883-885, 2002
1842002
High quantum efficiency for a porous silicon light emitting diode under pulsed operation
J Linnros, N Lalic
Applied physics letters 66 (22), 3048-3050, 1995
1691995
Ion-beam-induced epitaxial regrowth of amorphous layers in silicon on sapphire
J Linnros, B Svensson, G Holmen
Physical Review B 30 (7), 3629, 1984
1651984
Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in silicon
J Linnros, RG Elliman, WL Brown
Journal of Materials Research 3 (6), 1208-1211, 1988
1531988
Light emitting diode structure based on Si nanocrystals formed by implantation into thermal oxide
N Lalic, J Linnros
Journal of LUMINESCENCE 80 (1-4), 263-267, 1998
1501998
Waveguiding effects in the measurement of optical gain in a layer of Si nanocrystals
J Valenta, I Pelant, J Linnros
Applied physics letters 81 (8), 1396-1398, 2002
1482002
Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy deposition
J Linnros, G Holmen, B Svensson
Physical Review B 32 (5), 2770, 1985
1461985
Carrier lifetime measurements using free carrier absorption transients. I. Principle and injection dependence
J Linnros
Journal of applied physics 84 (1), 275-283, 1998
1231998
Controlled fabrication of silicon nanowires by electron beam lithography and electrochemical size reduction
R Juhasz, N Elfström, J Linnros
Nano letters 5 (2), 275-280, 2005
1212005
Auger recombination in 4H-SiC: Unusual temperature behavior
A Galeckas, J Linnros, V Grivickas, U Lindefelt, C Hallin
Applied Physics Letters 71 (22), 3269-3271, 1997
1171997
Recombination-induced stacking faults: evidence for a general mechanism in hexagonal SiC
A Galeckas, J Linnros, P Pirouz
Physical review letters 96 (2), 025502, 2006
1062006
Electroluminescence of single silicon nanocrystals
J Valenta, N Lalic, J Linnros
Applied physics letters 84 (9), 1459-1461, 2004
862004
Near-unity internal quantum efficiency of luminescent silicon nanocrystals with ligand passivation
F Sangghaleh, I Sychugov, Z Yang, JGC Veinot, J Linnros
ACS nano 9 (7), 7097-7104, 2015
832015
Light‐Emission Performance of Silicon Nanocrystals Deduced from Single Quantum Dot Spectroscopy
J Valenta, A Fucikova, F Vácha, F Adamec, J Humpolíčková, M Hof, ...
Advanced functional materials 18 (18), 2666-2672, 2008
712008
Optical characterization of excess carrier lifetime and surface recombination in 4H/6H–SiC
A Galeckas, J Linnros, M Frischholz, V Grivickas
Applied Physics Letters 79 (3), 365-367, 2001
692001
The system can't perform the operation now. Try again later.
Articles 1–20