Talbot Etienne
Talbot Etienne
Groupe de Physique des Matériaux UMR CNRS 6634 Université de Rouen
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Composition of wide bandgap semiconductor materials and nanostructures measured by atom probe tomography and its dependence on the surface electric field
L Mancini, N Amirifar, D Shinde, I Blum, M Gilbert, A Vella, F Vurpillot, ...
The Journal of Physical Chemistry C 118 (41), 24136-24151, 2014
Si nanoparticles in SiO2 An atomic scale observation for optimization of optical devices
E Talbot, R Lardé, F Gourbilleau, C Dufour, P Pareige
EPL (Europhysics Letters) 87 (2), 26004, 2009
Evidence of Superparamagnetic Co Clusters in Pulsed Laser Deposition-Grown Zn0.9Co0.1O Thin Films Using Atom Probe Tomography
R Lardé, E Talbot, P Pareige, H Bieber, G Schmerber, S Colis, ...
Journal of the American Chemical Society 133 (5), 1451-1458, 2011
Nanoscale evidence of erbium clustering in Er-doped silicon-rich silica
E Talbot, R Lardé, P Pareige, L Khomenkova, K Hijazi, F Gourbilleau
Nanoscale research letters 8 (1), 1-8, 2013
Direct imaging of rare-earth ion clusters in Yb: CaF 2
B Lacroix, C Genevois, JL Doualan, G Brasse, A Braud, P Ruterana, ...
Physical Review B 90 (12), 125124, 2014
Quantitative analysis of doped/undoped ZnO nanomaterials using laser assisted atom probe tomography: Influence of the analysis parameters
N Amirifar, R Lardé, E Talbot, P Pareige, L Rigutti, L Mancini, J Houard, ...
Journal of Applied Physics 118 (21), 215703, 2015
Influence of the supersaturation on Si diffusion and growth of Si nanoparticles in silicon-rich silica
M Roussel, E Talbot, P Pareige, F Gourbilleau
Journal of Applied Physics 113 (6), 063519, 2013
Atomic characterization of Si nanoclusters embedded in SiO2 by atom probe tomography
M Roussel, E Talbot, F Gourbilleau, P Pareige
Nanoscale research letters 6 (1), 1-8, 2011
Confined phase separation in SiOX nanometric thin layers
M Roussel, E Talbot, C Pareige, R Pratibha Nalini, F Gourbilleau, ...
Applied Physics Letters 103 (20), 203109, 2013
Investigation at the atomic scale of the Co spatial distribution in Zn (Co) O magnetic semiconductor oxide
R Lardé, E Talbot, F Vurpillot, P Pareige, G Schmerber, E Beaurepaire, ...
Journal of Applied Physics 105 (12), 126107, 2009
A Monte Carlo study of the magnetization reversal in DyFe2/YFe2 exchange-coupled superlattices
S Djedai, E Talbot, PE Berche
Journal of magnetism and magnetic materials 368, 29-35, 2014
Phase transformation in SiOx/SiO2 multilayers for optoelectronics and microelectronics applications
M Roussel, E Talbot, RP Nalini, F Gourbilleau, P Pareige
Ultramicroscopy 132, 290-294, 2013
Simultaneous quantification of indium and nitrogen concentration in InGaNAs using HAADF-STEM
T Grieb, K Müller, E Cadel, A Beyer, M Schowalter, E Talbot, K Volz, ...
Microscopy and Microanalysis 20 (6), 1740-1752, 2014
Composition and morphology of self-organized Mn-rich nanocolumns embedded in Ge: Correlation with the magnetic properties
I Mouton, R Lardé, E Talbot, E Cadel, C Genevois, D Blavette, V Baltz, ...
Journal of Applied Physics 112 (11), 113918, 2012
Atomic scale investigation of silicon nanowires and nanoclusters
M Roussel, W Chen, E Talbot, R Lardé, E Cadel, F Gourbilleau, ...
Nanoscale research letters 6 (1), 1-6, 2011
Atomic scale microstructures of high-k HfSiO thin films fabricated by magnetron sputtering
E Talbot, M Roussel, L Khomenkova, F Gourbilleau, P Pareige
Materials Science and Engineering: B 177 (10), 717-720, 2012
Magnetization depth profile of (Fe/Dy) multilayers
A Tamion, F Ott, PE Berche, E Talbot, C Bordel, D Blavette
Journal of magnetism and magnetic materials 320 (21), 2650-2659, 2008
The early stage of formation of self-organized nanocolumns in thin films: Monte Carlo simulations versus atomic-scale observations in Ge-Mn
I Mouton, E Talbot, C Pareige, R Lardé, D Blavette
Journal of Applied Physics 115 (5), 053515, 2014
Atomic scale observation of phase separation and formation of silicon clusters in Hf higk- silicates
E Talbot, M Roussel, C Genevois, P Pareige, L Khomenkova, X Portier, ...
Journal of Applied Physics 111 (10), 103519, 2012
Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/Germanium
PF Fazzini, F Cristiano, E Talbot, GB Assayag, S Paul, W Lerch, A Pakfar, ...
Thin solid films 518 (9), 2338-2341, 2010
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