Ji-Hui Yang
Title
Cited by
Cited by
Year
Halide perovskite materials for solar cells: a theoretical review
WJ Yin, JH Yang, J Kang, Y Yan, SH Wei
Journal of Materials Chemistry A 3 (17), 8926-8942, 2015
8302015
Intrinsic point defects and complexes in the quaternary kesterite semiconductor Cu 2 ZnSnS 4
S Chen, JH Yang, XG Gong, A Walsh, SH Wei
Physical Review B 81 (24), 245204, 2010
6722010
Compositional dependence of structural and electronic properties of Cu 2 ZnSn (S, Se) 4 alloys for thin film solar cells
S Chen, A Walsh, JH Yang, XG Gong, L Sun, PX Yang, JH Chu, SH Wei
Physical Review B 83 (12), 125201, 2011
4302011
Design of Lead-Free Inorganic Halide Perovskites for Solar Cells via Cation-Transmutation
XG Zhao, JH Yang, Y Fu, D Yang, Q Xu, L Yu, SH Wei, L Zhang
Journal of the American Chemical Society 139 (7), 2630-2638, 2017
3282017
Wurtzite-derived polytypes of kesterite and stannite quaternary chalcogenide semiconductors
S Chen, A Walsh, Y Luo, JH Yang, XG Gong, SH Wei
Physical Review B 82 (19), 195203, 2010
2612010
Effective band gap narrowing of anatase TiO2 by strain along a soft crystal direction
WJ Yin, S Chen, JH Yang, XG Gong, Y Yan, SH Wei
Applied Physics Letters 96 (22), 221901, 2010
2122010
Predicting two-dimensional boron–carbon compounds by the global optimization method
X Luo, J Yang, H Liu, X Wu, Y Wang, Y Ma, SH Wei, X Gong, H Xiang
Journal of the American Chemical Society 133 (40), 16285-16290, 2011
1912011
First-principles study on the electronic and optical properties of cubic ABX 3 halide perovskites
L Lang, JH Yang, HR Liu, HJ Xiang, XG Gong
Physics Letters A 378 (3), 290-293, 2014
1712014
Structural diversity and electronic properties of Cu 2 Sn X 3 (X= S, Se): A first-principles investigation
YT Zhai, S Chen, JH Yang, HJ Xiang, XG Gong, A Walsh, J Kang, SH Wei
Physical Review B 84 (7), 075213, 2011
1692011
Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors
YH Li, A Walsh, S Chen, WJ Yin, JH Yang, J Li, JLF Da Silva, XG Gong, ...
Applied Physics Letters 94 (21), 212109, 2009
1692009
Strong Dzyaloshinskii-Moriya Interaction and Origin of Ferroelectricity in Cu 2 OSeO 3
JH Yang, ZL Li, XZ Lu, MH Whangbo, SH Wei, XG Gong, HJ Xiang
Physical review letters 109 (10), 107203, 2012
1182012
Origin of the superior conductivity of perovskite Ba (Sr) SnO3
HR Liu, JH Yang, HJ Xiang, XG Gong, SH Wei
Applied Physics Letters 102 (11), 112109, 2013
1032013
Design of I2–II–IV–VI4 Semiconductors through Element Substitution: The Thermodynamic Stability Limit and Chemical Trend
C Wang, S Chen, JH Yang, L Lang, HJ Xiang, XG Gong, A Walsh, SH Wei
Chemistry of Materials 26 (11), 3411-3417, 2014
1002014
Two-Dimensional SiS Layers with Promising Electronic and Optoelectronic Properties: Theoretical Prediction
JH Yang, Y Zhang, WJ Yin, XG Gong, BI Yakobson, SH Wei
Nano letters 16 (2), 1110-1117, 2016
912016
Cu 2 Zn (Sn, Ge) Se 4 and Cu 2 Zn (Sn, Si) Se 4 alloys as photovoltaic materials: Structural and electronic properties
Q Shu, JH Yang, S Chen, B Huang, H Xiang, XG Gong, SH Wei
Physical Review B 87 (11), 115208, 2013
822013
Review on first-principles study of defect properties of CdTe as a solar cell absorber
JH Yang, WJ Yin, JS Park, J Ma, SH Wei
Semiconductor Science and Technology 31 (8), 083002, 2016
722016
Electronic structure and phase stability of MgTe, ZnTe, CdTe, and their alloys in the B3, B4, and B8 structures
JH Yang, S Chen, WJ Yin, XG Gong, A Walsh, SH Wei
Physical Review B 79 (24), 245202, 2009
622009
First-principles study of H+ intercalation in layer-structured LiCoO2
X Gu, J Liu, J Yang, H Xiang, X Gong, Y Xia
The Journal of Physical Chemistry C 115 (25), 12672-12676, 2011
512011
Enhanced p-type dopability of P and As in CdTe using non-equilibrium thermal processing
JH Yang, WJ Yin, JS Park, J Burst, WK Metzger, T Gessert, T Barnes, ...
Journal of Applied Physics 118 (2), 025102, 2015
502015
Fast self-diffusion of ions in CH 3 NH 3 PbI 3: the interstiticaly mechanism versus vacancy-assisted mechanism
JH Yang, WJ Yin, JS Park, SH Wei
Journal of Materials Chemistry A 4 (34), 13105-13112, 2016
482016
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