Alexander Zaslavsky
Alexander Zaslavsky
Professor of Engineering, Brown University
Verified email at - Homepage
Cited by
Cited by
Preparation of (In, Mn) As/(Ga, Al) Sb magnetic semiconductor heterostructures and their ferromagnetic characteristics
H Munekata, A Zaslavsky, P Fumagalli, RJ Gambino
Applied physics letters 63 (21), 2929-2931, 1993
Materials: introduction and applications
W Brostow, HEH Lobland
John Wiley & Sons, 2016
Noise characteristics of double-barrier resonant-tunneling structures below 10 kHz
YP Li, A Zaslavsky, DC Tsui, M Santos, M Shayegan
Physical Review B 41 (12), 8388, 1990
Lateral interband tunneling transistor in silicon-on-insulator
C Aydin, A Zaslavsky, S Luryi, S Cristoloveanu, D Mariolle, D Fraboulet, ...
Applied Physics Letters 84 (10), 1780-1782, 2004
Resonant tunneling and intrinsic bistability in asymmetric double‐barrier heterostructures
A Zaslavsky, VJ Goldman, DC Tsui, JE Cunningham
Applied physics letters 53 (15), 1408-1410, 1988
Designing logic circuits for probabilistic computation in the presence of noise
K Nepal, RI Bahar, J Mundy, WR Patterson, A Zaslavsky
Proceedings of the 42nd annual Design Automation Conference, 485-490, 2005
A compact capacitor-less high-speed DRAM using field effect-controlled charge regeneration
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
IEEE Electron Device Letters 33 (2), 179-181, 2011
Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
Solid-State Electronics 65, 226-233, 2011
Future trends in microelectronics the road ahead.
S Luryi, J Xu, A Zaslavski
John Wiley & Sons, 1999
Photonic band gap quantum well and quantum box structures: A high‐Q resonant cavity
SY Lin, VM Hietala, SK Lyo, A Zaslavsky
Applied Physics Letters 68 (23), 3233-3235, 1996
Switching device based on first-order metal-insulator transition induced by external electric field
F Chudnovskiy, S Luryi, B Spivak
Future trends in microelectronics: the nano millennium, 148-155, 2002
Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator
D Kazazis, P Jannaty, A Zaslavsky, C Le Royer, C Tabone, L Clavelier, ...
Applied Physics Letters 94 (26), 263508, 2009
Future Trends in Microelectronics: Frontiers and Innovations
S Luryi, J Xu, A Zaslavsky
John Wiley & Sons, 2013
Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires
HT Johnson, LB Freund, CD Akyüz, A Zaslavsky
Journal of applied physics 84 (7), 3714-3725, 1998
A tunneling field effect transistor model combining interband tunneling with channel transport
J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu
Journal of Applied Physics 110 (10), 104503, 2011
Reduction of reflection losses in using motheye antireflection surface relief structures
C Aydin, A Zaslavsky, GJ Sonek, J Goldstein
Applied Physics Letters 80 (13), 2242-2244, 2002
Plastic electronics and future trends in microelectronics
Synthetic metals 115 (1-3), 1-3, 2000
A review of sharp-switching devices for ultra-low power applications
S Cristoloveanu, J Wan, A Zaslavsky
IEEE Journal of the Electron Devices Society 4 (5), 215-226, 2016
A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection
J Wan, S Cristoloveanu, C Le Royer, A Zaslavsky
Solid-State Electronics 76, 109-111, 2012
Absence of compressible edge channel rings in quantum antidots
I Karakurt, VJ Goldman, J Liu, A Zaslavsky
Physical review letters 87 (14), 146801, 2001
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