Guillaume Prenat
Guillaume Prenat
Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP*, INAC-Spintec, 38000 Grenoble, France
Verified email at
Cited by
Cited by
Opportunities and challenges for spintronics in the microelectronics industry
B Dieny, IL Prejbeanu, K Garello, P Gambardella, P Freitas, R Lehndorff, ...
Nature Electronics 3 (8), 446-459, 2020
Ultra-fast and high-reliability SOT-MRAM: From cache replacement to normally-off computing
G Prenat, K Jabeur, P Vanhauwaert, G Di Pendina, F Oboril, R Bishnoi, ...
IEEE Transactions on Multi-Scale Computing Systems 2 (1), 49-60, 2015
Spin-transfer effect and its use in spintronic components
B Dieny, RC Sousa, J Herault, C Papusoi, G Prenat, U Ebels, ...
International Journal of Nanotechnology 7 (4-8), 591-614, 2010
Spintronics-based computing
W Zhao, G Prenat
Springer, 2015
Spin orbit torque non-volatile flip-flop for high speed and low energy applications
K Jabeur, G Di Pendina, F Bernard-Granger, G Prenat
IEEE electron device letters 35 (3), 408-410, 2014
SPICE modelling of magnetic tunnel junctions written by spin-transfer torque
W Guo, G Prenat, V Javerliac, M El Baraji, N De Mestier, C Baraduc, ...
Journal of Physics D: Applied Physics 43 (21), 215001, 2010
Electrical modeling of stochastic spin transfer torque writing in magnetic tunnel junctions for memory and logic applications
Y Zhang, W Zhao, G Prenat, T Devolder, JO Klein, C Chappert, B Dieny, ...
IEEE Transactions on Magnetics 49 (7), 4375-4378, 2013
Beyond STT-MRAM, spin orbit torque RAM SOT-MRAM for high speed and high reliability applications
G Prenat, K Jabeur, G Di Pendina, O Boulle, G Gaudin
Spintronics-based Computing, 145-157, 2015
Synchronous 8-bit non-volatile full-adder based on spin transfer torque magnetic tunnel junction
E Deng, Y Zhang, W Kang, B Dieny, JO Klein, G Prenat, W Zhao
IEEE Transactions on Circuits and Systems I: Regular Papers 62 (7), 1757-1765, 2015
CMOS/magnetic hybrid architectures
G Prenat, M El Baraji, W Guo, R Sousa, L Buda-Prejbeanu, B Dieny, ...
2007 14th IEEE international conference on electronics, circuits and systems …, 2007
Dynamic compact model of thermally assisted switching magnetic tunnel junctions
M El Baraji, V Javerliac, W Guo, G Prenat, B Dieny
Journal of Applied Physics 106 (12), 2009
TAS-MRAM based non-volatile FPGA logic circuit
W Zhao, E Belhaire, B Dieny, G Prenat, C Chappert
2007 International Conference on Field-Programmable Technology, 153-160, 2007
Reprogrammable logic device resistant to radiations
G Prenat, O Goncalves
US Patent 9,437,260, 2016
High-frequency low-power magnetic full-adder based on magnetic tunnel junction with spin-hall assistance
E Deng, Z Wang, JO Klein, G Prenat, B Dieny, W Zhao
IEEE Transactions on Magnetics 51 (11), 1-4, 2015
Compact modeling of a magnetic tunnel junction based on spin orbit torque
K Jabeur, G Di Pendina, G Prenat, LD Buda-Prejbeanu, B Dieny
IEEE transactions on magnetics 50 (7), 1-8, 2014
A compact model of precessional spin-transfer switching for MTJ with a perpendicular polarizer
A Mejdoubi, G Prenat, B Dieny
2012 28th International Conference on Microelectronics Proceedings, 225-228, 2012
TAS-MRAM-based low-power high-speed runtime reconfiguration (RTR) FPGA
W Zhao, E Belhaire, C Chappert, B Dieny, G Prenat
ACM Transactions on Reconfigurable Technology and Systems (TRETS) 2 (2), 1-19, 2009
A low-cost digital frequency testing approach for mixed-signal devices using ΣΔ modulation
G Prenat, S Mir, D Vázquez, L Rolíndez
Microelectronics journal 36 (12), 1080-1090, 2005
Study of two writing schemes for a magnetic tunnel junction based on spin orbit torque
K Jabeur, LD Buda-Prejbeanu, G Prenat, G Di Pendina
International Journal of Electrical and Computer Engineering 7 (8), 1054-1059, 2013
Beyond MRAM, CMOS/MTJ integration for logic components
G Prenat, B Dieny, W Guo, M El Baraji, V Javerliac, JP Nozieres
IEEE transactions on magnetics 45 (10), 3400-3405, 2009
The system can't perform the operation now. Try again later.
Articles 1–20