| Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films JH Leach, K Udwary, J Rumsey, G Dodson, H Splawn, KR Evans APL Materials 7 (2), 2019 | 108 | 2019 |
| Evaluation of the concentration of point defects in GaN MA Reshchikov, A Usikov, H Helava, Y Makarov, V Prozheeva, ... Scientific Reports 7 (1), 9297, 2017 | 69 | 2017 |
| AlGaN devices and growth of device structures KA Jones, TP Chow, M Wraback, M Shatalov, Z Sitar, F Shahedipour, ... Journal of Materials Science 50, 3267-3307, 2015 | 66 | 2015 |
| Fabrication and characterization of native non-polar GaN substrates D Hanser, L Liu, EA Preble, K Udwary, T Paskova, KR Evans Journal of crystal growth 310 (17), 3953-3956, 2008 | 46 | 2008 |
| Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN E Meissner, S Schweigard, J Friedrich, T Paskova, K Udwary, G Leibiger, ... Journal of Crystal Growth 340 (1), 78-82, 2012 | 26 | 2012 |
| Growth of AlGaAs, AlInP, and AlGaInP by hydride vapor phase epitaxy KL Schulte, W Metaferia, J Simon, D Guiling, K Udwary, G Dodson, ... ACS Applied Energy Materials 2 (12), 8405-8410, 2019 | 24 | 2019 |
| Indium incorporation in InGaN/GaN quantum wells grown on m‐plane GaN substrate and c‐plane sapphire KY Lai, T Paskova, VD Wheeler, TY Chung, JA Grenko, MAL Johnson, ... physica status solidi (a) 209 (3), 559-564, 2012 | 21 | 2012 |
| Charge transfer in semi-insulating Fe-doped GaN J Dashdorj, ME Zvanut, JG Harrison, K Udwary, T Paskova Journal of Applied Physics 112 (1), 2012 | 19 | 2012 |
| Incorporation of Mg in free-standing HVPE GaN substrates ME Zvanut, J Dashdorj, JA Freitas, ER Glaser, WR Willoughby, JH Leach, ... Journal of Electronic Materials 45, 2692-2696, 2016 | 18 | 2016 |
| Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates KY Lai, T Paskova, VD Wheeler, JA Grenko, MAL Johnson, DW Barlage, ... Journal of Applied Physics 106 (11), 2009 | 16 | 2009 |
| GaN power schottky diodes with drift layers grown on four substrates RP Tompkins, JR Smith, KW Kirchner, KA Jones, JH Leach, K Udwary, ... Journal of electronic materials 43, 850-856, 2014 | 15 | 2014 |
| Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence JD McNamara, MA Foussekis, AA Baski, X Li, V Avrutin, H Morkoç, ... physica status solidi c 10 (3), 536-539, 2013 | 13 | 2013 |
| Cathodoluminescence evaluation of subsurface damage in GaN substrate after polishing KY Lai, MAL Johnson, T Paskova, AD Hanser, K Udwary, EA Preble, ... physica status solidi c 6 (S2 2), S325-S328, 2009 | 13 | 2009 |
| Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth KY Lai, T Paskova, VD Wheeler, JA Grenko, MAL Johnson, K Udwary, ... Journal of crystal growth 312 (7), 902-905, 2010 | 12 | 2010 |
| APL Mater. 7, 022504 (2019) JH Leach, K Udwary, J Rumsey, G Dodson, H Splawn, KR Evans | 12 | |
| Effect of local fields on the Mg acceptor in GaN films and GaN substrates ME Zvanut, J Dashdorj, UR Sunay, JH Leach, K Udwary Journal of Applied Physics 120 (13), 2016 | 11 | 2016 |
| 2 ″‐4 ″diameter GaN‐on‐sapphire substrates free of wafer bow at all temperatures EA Preble, JH Leach, R Metzger, E Shishkin, KA Udwary physica status solidi (c) 11 (3‐4), 604-607, 2014 | 10 | 2014 |
| Towards manufacturing large area GaN substrates from QST® seeds JH Leach, K Udwary, P Quayle, V Odnoblyudov, C Basceri, O Aktas, ... Proceeding of Compound Semiconductor Manufacturing Technology, 2018 | 7 | 2018 |
| Thermoelectric properties of undoped and si-doped bulk gan B Wang, B Kucukgok, Q He, AG Melton, J Leach, K Udwary, K Evans, ... MRS Online Proceedings Library (OPL) 1558, mrss13-1558-z09-03, 2013 | 6 | 2013 |
| Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates SM Eichfeld, D Won, K Trumbull, M Labella, X Weng, J Robinson, ... physica status solidi c 8 (7‐8), 2053-2055, 2011 | 5 | 2011 |
