Doyoung Jang
Doyoung Jang
SK hynix
Μη επαληθευμένη διεύθυνση ηλ. ταχυδρομείου
Παρατίθεται από
Παρατίθεται από
Device exploration of nanosheet transistors for sub-7-nm technology node
D Jang, D Yakimets, G Eneman, P Schuddinck, MG Bardon, P Raghavan, ...
IEEE Transactions on Electron Devices 64 (6), 2707-2713, 2017
Self-heating on bulk FinFET from 14nm down to 7nm node
D Jang, E Bury, R Ritzenthaler, MG Bardon, T Chiarella, K Miyaguchi, ...
2015 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2015
Low-frequency noise in junctionless multigate transistors
D Jang, JW Lee, CW Lee, JP Colinge, L Montès, JI Lee, GT Kim, ...
Applied Physics Letters 98 (13), 133502, 2011
Vertically stacked gate-all-around Si nanowire transistors: Key process optimizations and ring oscillator demonstration
H Mertens, R Ritzenthaler, V Pena, G Santoro, K Kenis, A Schulze, ...
2017 IEEE International Electron Devices Meeting (IEDM), 37.4. 1-37.4. 4, 2017
Understanding energy efficiency benefits of carbon nanotube field-effect transistors for digital VLSI
G Hills, MG Bardon, G Doornbos, D Yakimets, P Schuddinck, R Baert, ...
IEEE Transactions on Nanotechnology 17 (6), 1259-1269, 2018
Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires
K Tachi, M Casse, D Jang, C Dupre, A Hubert, N Vulliet, V Maffini-Alvaro, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
Extreme scaling enabled by 5 tracks cells: Holistic design-device co-optimization for FinFETs and lateral nanowires
MG Bardon, Y Sherazi, P Schuddinck, D Jang, D Yakimets, P Debacker, ...
2016 IEEE International Electron Devices Meeting (IEDM), 28.2. 1-28.2. 4, 2016
Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology
D Yakimets, MG Bardon, D Jang, P Schuddinck, Y Sherazi, P Weckx, ...
2017 IEEE International Electron Devices Meeting (IEDM), 20.4. 1-20.4. 4, 2017
Holisitic device exploration for 7nm node
P Raghavan, MG Bardon, D Jang, P Schuddinck, D Yakimets, J Ryckaert, ...
2015 IEEE Custom Integrated Circuits Conference (CICC), 1-5, 2015
Nanoneedle transistor-based sensors for the selective detection of intracellular calcium ions
D Son, SY Park, B Kim, JT Koh, TH Kim, S An, D Jang, GT Kim, W Jhe, ...
ACS nano 5 (5), 3888-3895, 2011
Mobility analysis of surface roughness scattering in FinFET devices
JW Lee, D Jang, M Mouis, GT Kim, T Chiarella, T Hoffmann, G Ghibaudo
Solid-State Electronics 62 (1), 195-201, 2011
Design technology co-optimization for N10
J Ryckaert, P Raghavan, R Baert, MG Bardon, M Dusa, A Mallik, ...
Proceedings of the IEEE 2014 Custom Integrated Circuits Conference, 1-8, 2014
Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors
D Jang, JW Lee, K Tachi, L Montes, T Ernst, GT Kim, G Ghibaudo
Applied Physics Letters 97 (7), 073505, 2010
Analysis of charge sensitivity and low frequency noise limitation in silicon nanowire sensors
JW Lee, D Jang, GT Kim, M Mouis, G Ghibaudo
Journal of Applied Physics 107 (4), 044501, 2010
Layout-induced stress effects in 14nm & 10nm FinFETs and their impact on performance
MG Bardon, V Moroz, G Eneman, P Schuddinck, M Dehan, D Yakimets, ...
2013 Symposium on VLSI Technology, T114-T115, 2013
Dimensioning for power and performance under 10nm: The limits of FinFETs scaling
MG Bardon, P Schuddinck, P Raghavan, D Jang, D Yakimets, A Mercha, ...
2015 International Conference on IC Design & Technology (ICICDT), 1-4, 2015
Reduced charge fluctuations in individual SnO2 nanowires by suppressed surface reactions
J Huh, MK Joo, D Jang, JH Lee, GT Kim
Journal of Materials Chemistry 22 (45), 24012-24016, 2012
Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients
J Huh, DC Kim, AM Munshi, DL Dheeraj, D Jang, GT Kim, BO Fimland, ...
Nanotechnology 27 (38), 385703, 2016
Scaling of BTI reliability in presence of time-zero variability
H Kükner, P Weckx, J Franco, M Toledano-Luque, M Cho, B Kaczer, ...
2014 IEEE International Reliability Physics Symposium, CA. 5.1-CA. 5.7, 2014
Limitations on lateral nanowire scaling beyond 7-nm node
UK Das, MG Bardon, D Jang, G Eneman, P Schuddinck, D Yakimets, ...
IEEE Electron Device Letters 38 (1), 9-11, 2016
Δεν είναι δυνατή η εκτέλεση της ενέργειας από το σύστημα αυτή τη στιγμή. Προσπαθήστε ξανά αργότερα.
Άρθρα 1–20