| LED with uniform current spreading and method of fabrication JS Kwak, MJ Park, FA Khaja, CC Chen US Patent 8,502,192, 2013 | 136 | 2013 |
| Advanced CMOS devices: Challenges and implant solutions B Colombeau, B Guo, HJ Gossmann, F Khaja, N Pradhan, A Waite, ... physica status solidi (a) 211 (1), 101-108, 2014 | 39 | 2014 |
| Ultra-low NMOS contact resistivity using a novel plasma-based DSS implant and laser anneal for post 7 nm nodes CN Ni, KV Rao, F Khaja, S Sharma, S Tang, JJ Chen, KE Hollar, N Breil, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 38 | 2016 |
| Sub-10−9 Ω·cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation JL Everaert, M Schaekers, H Yu, LL Wang, A Hikavyy, L Date, ... 2017 Symposium on VLSI Technology, T214-T215, 2017 | 36 | 2017 |
| Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-) silicidation H Yu, M Schaekers, A Hikavyy, E Rosseel, A Peter, K Hollar, FA Khaja, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 36 | 2016 |
| TECHNIQUES FOR FORMING ANGLED STRUCTURES FOR REDUCED DEFECTS IN HETEROEPITAXY OF SEMICONDUCTOR FILMS S Srinivasan, FA Khaja, S Ruffell, J Hautala, ... US Patent US 9,287,123, 2016 | 35 | 2016 |
| Fin doping by hot implant for 14nm FinFET technology and beyond BS Wood, FA Khaja, BP Colombeau, S Sun, A Waite, M Jin, H Chen, ... ECS Transactions 58 (9), 249, 2013 | 34 | 2013 |
| Comprehensive study of Ga Activation in Si, SiGe and Ge with 5 × 10-10 Ω·cm2 Contact Resistivity Achieved on Ga doped Ge using Nanosecond Laser Activation YLJ Lin-Lin Wang, Hao Yu, M. Schaekers, J - L. Everaert, A. Franquet, B ... 2017 IEEE International Electron Devices Meeting (IEDM), 22.4.1-22.4. 4, 2017 | 31 | 2017 |
| Drain current variability and MOSFET parameters correlations in planar FDSOI technology J Mazurier, O Weber, F Andrieu, F Allain, L Tosti, L Brévard, O Rozeau, ... 2011 International Electron Devices Meeting, 25.5. 1-25.5. 4, 2011 | 29 | 2011 |
| Physical understanding of cryogenic implant benefits for electrical junction stability F Adeni Khaja, B Colombeau, T Thanigaivelan, D Ramappa, T Henry Applied Physics Letters 100 (11), 2012 | 28 | 2012 |
| Comparison of different GaN etching techniques L Ma, KF Adeni, C Zeng, Y Jin, K Dandu, Y Saripalli, M Johnson, ... GaN 2 (3), 2, 2006 | 21 | 2006 |
| Utilization of angled trench for effective aspect ratio trapping of defects in strain relaxed heteroepitaxy of semiconductor films ST Srinivasan, FA Khaja, EAC Sanchez, PM Martin US Patent 9,406,507, 2016 | 19 | 2016 |
| Enabling high activation of dopants in indium-aluminum-galium-nitride material system using hot implantation and nanosecond annealing ST Srinivasan, FA Khaja US Patent App. 14/503,631, 2015 | 15 | 2015 |
| Method of reducing contact resistance FA Khaja, B Colombeau US Patent 8,999,800, 2015 | 14 | 2015 |
| Bulk FinFET junction isolation by heavy species and thermal implants FA Khaja, HJL Gossmann, B Colombeau, T Thanigaivelan 2014 20th International Conference on Ion Implantation Technology (IIT), 1-4, 2014 | 14 | 2014 |
| Heated implantation with amorphous carbon CMOS mask for scaled FinFETs M Togo, Y Sasaki, G Zschaetzsch, G Boccardi, R Ritzenthaler, JW Lee, ... 2013 Symposium on VLSI Technology, T196-T197, 2013 | 14 | 2013 |
| PMOS contact resistance solution compatible to CMOS integration for 7 nm node and beyond CN Ni, YC Huang, S Jun, S Sun, A Vyas, F Khaja, KV Rao, S Sharma, ... 2016 International Symposium on VLSI Technology, Systems and Application …, 2016 | 11 | 2016 |
| Ultra low contact resistivity (< 1×10−8 Ω-cm2) to In0.53Ga0.47As fin sidewall (110)/(100) surfaces: Realized with a VLSI processed III–V fin TLM structure … RTP Lee, Y Ohsawa, C Huffman, Y Trickett, G Nakamura, C Hatem, ... 2014 IEEE International Electron Devices Meeting, 32.4. 1-32.4. 4, 2014 | 11 | 2014 |
| Ultra-low (1.2×10−9Ωcm2) p-Si0.55Ge0.45contact resistivity (ρc) using nanosecond laser anneal for 7nm nodes and beyond CY Chang, FA Khaja, KE Hollar, KV Rao, C Lazik, M Jin, H Zhou, R Hung, ... 2017 17th International Workshop on Junction Technology (IWJT), 23-26, 2017 | 10 | 2017 |
| Novel Solutions to Enable Contact Resistivity <1E-9 ohms-cm2 for 5nm Node and Beyond NKEY Raymond Hung, Fareen Adeni Khaja, Kelly E Hollar, KV Rao, Samuel ... International Symposium on VLSI Technology, Systems and Applications (2018 …, 2018 | 9* | 2018 |
