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Aldo Armigliato
Aldo Armigliato
CNR-Istituto IMM Bologna
Adresse e-mail validée de bo.imm.cnr.it - Page d'accueil
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Precipitation as the phenomenon responsible for the electrically inactive phosphorus in silicon
D Nobili, A Armigliato, M Finnetti, S Solmi
Journal of Applied Physics 53 (3), 1484-1491, 1982
1781982
Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates
S Solmi, A Parisini, R Angelucci, A Armigliato, D Nobili, L Moro
Physical Review B 53 (12), 7836, 1996
1641996
Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy
V Senez, A Armigliato, I De Wolf, G Carnevale, R Balboni, S Frabboni, ...
Journal of Applied Physics 94 (9), 5574-5583, 2003
1252003
Precipitation, aggregation, and diffusion in heavily arsenic-doped silicon
D Nobili, S Solmi, A Parisini, M Derdour, A Armigliato, L Moro
Physical Review B 49 (4), 2477, 1994
1231994
The nature of electrically inactive antimony in silicon
A Nylandsted Larsen, FT Pedersen, G Weyer, R Galloni, R Rizzoli, ...
Journal of applied physics 59 (6), 1908-1917, 1986
941986
Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices
A Armigliato, R Balboni, GP Carnevale, G Pavia, D Piccolo, S Frabboni, ...
Applied Physics Letters 82 (13), 2172-2174, 2003
852003
Growth and structure of titanium silicide phases formed by thin Ti films on Si crystals
GG Bentini, R Nipoti, A Armigliato, M Berti, AV Drigo, C Cohen
Journal of Applied Physics 57 (2), 270-275, 1985
791985
Electrical activity and structural evolution correlations in laser and thermally annealed As‐implanted Si specimens
A Parisini, A Bourret, A Armigliato, M Servidori, S Solmi, R Fabbri, ...
Journal of applied physics 67 (5), 2320-2332, 1990
771990
Semiconductor Silicon 1977
A Armigliato, D Nobili, P Ostoja, M Servidori, S Solmi, H Huff, E Sirtl
The Electrochemical Society 77, 2, 1977
651977
Electrical activation of boron-implanted silicon during rapid thermal annealing
E Landi, A Armigliato, S Solmi, R Kögler, E Wieser
Applied Physics A 47, 359-366, 1988
571988
Determination of bulk mismatch values in trasmission electron microscopy cross-sections of heteostructures by convergent-beam electron diffraction
R Balboni, S Frabboni, A Armigliato
Philosophical Magazine A 77 (1), 67-83, 1998
561998
Extended x-ray-absorption fine-structure study of the local atomic structure in As+ heavily implanted silicon
JL Allain, JR Regnard, A Bourret, A Parisini, A Armigliato, G Tourillon, ...
Physical Review B 46 (15), 9434, 1992
561992
On the growth of stacking faults and dislocations induced in silicon by phosphorus predeposition
A Armigliato, M Servidori, S Solmi, I Vecchi
Journal of Applied Physics 48 (5), 1806-1812, 1977
551977
SiP precipitation within the doped silicon lattice, concomitant with phosphorus predeposition
A Armigliato, D Nobili, M Servidori, S Solmi
Journal of Applied Physics 47 (12), 5489-5491, 1976
541976
Techniques for mechanical strain analysis in sub-micrometer structures: TEM/CBED, micro-Raman spectroscopy, X-ray micro-diffraction and modeling
I De Wolf, V Senez, R Balboni, A Armigliato, S Frabboni, A Cedola, ...
Microelectronic engineering 70 (2-4), 425-435, 2003
532003
nlinImproving spatial resolution of convergent beam electron diffraction strain mapping in silicon microstructures
A Armigliato, R Balboni, S Frabboni
Applied Physics Letters 86 (6), 2005
512005
Electron microscopy of As supersaturated silicon
A Armigliato, D Nobili, S Solmi, A Bourret, P Werner
Journal of the Electrochemical Society 133 (12), 2560, 1986
511986
Preparation of cross-sections of silicon specimens for transmission electron microscopy
A Garulli, A Armigliato, M Vanzi
Journal de microscopie et de spectroscopie électroniques 10 (2), 135-144, 1985
511985
Equilibrium carrier density and solubility of antimony in silicon
D Nobili, R Angelucci, A Armigliato, E Landi, S Solmi
Journal of the Electrochemical Society 136 (4), 1142, 1989
501989
Synthesis of MMoO4/SiO2 catalysts (M= Ni or Co) by a sol–gel route via silicon alkoxides: Stabilization of β-NiMoO4 at room temperature
D Cauzzi, M Deltratti, G Predieri, A Tiripicchio, A Kaddouri, C Mazzocchia, ...
Applied Catalysis A: General 182 (1), 125-135, 1999
431999
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