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Shafat Jahangir
Shafat Jahangir
Intel Corporation; University of Michigan; Bangladesh University of Engineering and Technology
Verified email at umich.edu
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Cited by
Year
Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon
T Frost, S Jahangir, E Stark, S Deshpande, A Hazari, C Zhao, BS Ooi, ...
Nano letters 14 (8), 4535-4541, 2014
1722014
An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination
C Zhao, TK Ng, A Prabaswara, M Conroy, S Jahangir, T Frost, J O'Connell, ...
Nanoscale 7 (40), 16658-16665, 2015
1052015
Molecular beam epitaxial growth and optical properties of red-emitting (λ= 650 nm) InGaN/GaN disks-in-nanowires on silicon
S Jahangir, M Mandl, M Strassburg, P Bhattacharya
Applied Physics Letters 102 (7), 2013
972013
Formation and nature of InGaN quantum dots in GaN nanowires
S Deshpande, T Frost, L Yan, S Jahangir, A Hazari, X Liu, ...
Nano letters 15 (3), 1647-1653, 2015
802015
Room-temperature polariton lasing from GaN nanowire array clad by dielectric microcavity
J Heo, S Jahangir, B Xiao, P Bhattacharya
Nano letters 13 (6), 2376-2380, 2013
612013
Misorientation defects in coalesced self-catalyzed GaN nanowires
KA Grossklaus, A Banerjee, S Jahangir, P Bhattacharya, JM Millunchick
Journal of crystal growth 371, 142-147, 2013
602013
Red-Emitting ( nm) In0.51Ga0.49N/GaN Disk-in-Nanowire Light Emitting Diodes on Silicon
S Jahangir, T Schimpke, M Strassburg, KA Grossklaus, JM Millunchick, ...
IEEE Journal of Quantum Electronics 50 (7), 530-537, 2014
522014
Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts
H Kum, J Heo, S Jahangir, A Banerjee, W Guo, P Bhattacharya
Applied Physics Letters 100 (18), 2012
502012
Structural and optical properties of disc-in-wire InGaN/GaN LEDs
L Yan, S Jahangir, SA Wight, B Nikoobakht, P Bhattacharya, ...
Nano letters 15 (3), 1535-1539, 2015
442015
Small signal modulation characteristics of red-emitting (λ= 610 nm) III-nitride nanowire array lasers on (001) silicon
S Jahangir, T Frost, A Hazari, L Yan, E Stark, T LaMountain, ...
Applied Physics Letters 106 (7), 2015
392015
Spin diffusion in bulk GaN measured with MnAs spin injector
S Jahangir, F Doğan, H Kum, A Manchon, P Bhattacharya
Physical Review B 86 (3), 035315, 2012
292012
Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes
S Jahangir, I Pietzonka, M Strassburg, P Bhattacharya
Applied Physics Letters 105 (11), 2014
282014
InGaN/GaN nanowires grown on SiO2 and light emitting diodes with low turn on voltages
Y Park, S Jahangir, Y Park, P Bhattacharya, J Heo
Optics express 23 (11), A650-A656, 2015
232015
Carrier lifetimes in green emitting InGaN/GaN disks‐in‐nanowire and characteristics of green light emitting diodes
S Jahangir, A Banerjee, P Bhattacharya
physica status solidi c 10 (5), 812-815, 2013
202013
III-nitride electrically pumped visible and near-infrared nanowire lasers on (001) silicon
P Bhattacharya, A Hazari, S Jahangir, W Guo, T Frost
Semiconductors and Semimetals 96, 385-409, 2017
122017
Temperature-dependent measurement of Auger recombination in In0. 40Ga0. 60N/GaN red-emitting (λ= 630 nm) quantum dots
T Frost, A Banerjee, S Jahangir, P Bhattacharya
Applied Physics Letters 104 (8), 2014
122014
Red to near-infrared emission from InGaN/GaN quantum-disks-in-nanowires LED
TK Ng, C Zhao, C Shen, S Jahangir, B Janjua, AB Slimane, CH Kang, ...
2014 Conference on Lasers and Electro-optics (CLEO)-Laser Science to …, 2014
112014
InGaN/GaN self-organized quantum dot lasers grown by molecular beam epitaxy
A Banerjee, T Frost, S Jahangir, E Stark, P Bhattacharya
Journal of crystal growth 378, 566-570, 2013
92013
A numerical model for solving two dimensional Poisson-Schrödinger equation in depletion all around operation of the SOI four gate transistor
S Jahangir, QDM Khosru
2009 IEEE International Conference of Electron Devices and Solid-State …, 2009
92009
III-nitride nanowire LEDs and diode lasers: monolithic light sources on (001) Si emitting in the 600-1300nm range
P Bhattacharya, A Hazari, S Jahangir
Novel In-Plane Semiconductor Lasers XVII 10553, 1055302, 2018
82018
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