Robert M. Wallace

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Christopher HinkleUniversity of Notre Dame, Electrical EngineeringVerified email at nd.edu
Stephen McDonnellUniversity of VirginiaVerified email at virginia.edu
Rafik AddouOregon State UniversityVerified email at oregonstate.edu
Bruce GnadeSMUVerified email at smu.edu
Luigi ColomboUT DallasVerified email at utdallas.edu
Eric M VogelProfessor of Materials Science and Engineering, Georgia Institute of TechnologyVerified email at mse.gatech.edu
Barry BrennanNational Physical LaboratoryVerified email at npl.co.uk
Hong DongNankai UniversityVerified email at nankai.edu.cn
Manuel Quevedo-lopezUniversity of Texas at DallasVerified email at utdallas.edu
Rodney RuoffThe IBS CMCM, Dept. of Chemistry, Dept. of MS&ESchool of Energy and ChEng,Verified email at unist.ac.kr
Francisco Servando Aguirre-TostadoCentro de Investigación en Materiales Avanzados, S.C., Unidad MonterreyVerified email at cimav.edu.mx
Dmitry ZhernokletovIntermolecular Inc.Verified email at intermolecular.com
Santosh KCSan José State UniversityVerified email at sjsu.edu
Cheng GongAssistant Professor, University of MarylandVerified email at umd.edu
Joshua A. RobinsonProf. MatSE; Center for 2DLM; ATOMIC; 2D Crystal Consort.; The Pennsylvania State UniversityVerified email at psu.edu
pk hurleyTyndall National Institute, University College CorkVerified email at tyndall.ie
Bongki LeeTechnology Development Engineer, GLOBALFOUNDRIESVerified email at globalfoundries.com
Lanxia ChengSenior Process Engineer_EMD ElectronicsVerified email at emdgroup.com
Chadwin D. YoungUniversity of Texas at DallasVerified email at utdallas.edu
Wang WeichaoNankai UniversityVerified email at nankai.edu.cn

Robert M. Wallace

University of Texas at Dallas

Verified email at utdallas.edu - Homepage

Electronic Materials Surfaces Interfaces


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High-κ gate dielectrics: Current status and materials properties considerations GD Wilk, RM Wallace, JM Anthony Journal of applied physics 89 (10), 5243-5275, 2001	7295	2001
Carbon-based supercapacitors produced by activation of graphene Y Zhu, S Murali, MD Stoller, KJ Ganesh, W Cai, PJ Ferreira, A Pirkle, ... science 332 (6037), 1537-1541, 2011	5573	2011
Hafnium and zirconium silicates for advanced gate dielectrics GD Wilk, RM Wallace, JM Anthony Journal of Applied Physics 87 (1), 484-492, 2000	1324	2000
The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO₂ A Pirkle, J Chan, A Venugopal, D Hinojos, CW Magnuson, S McDonnell, ... Applied Physics Letters 99 (12), 122108, 2011	955	2011
The role of oxygen during thermal reduction of graphene oxide studied by infrared absorption spectroscopy M Acik, G Lee, C Mattevi, A Pirkle, RM Wallace, M Chhowalla, K Cho, ... The Journal of Physical Chemistry C 115 (40), 19761-19781, 2011	733	2011
Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon GD Wilk, RM Wallace Applied Physics Letters 74 (19), 2854-2856, 1999	671	1999
Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors C Gong, H Zhang, W Wang, L Colombo, RM Wallace, K Cho Applied Physics Letters 103 (5), 053513, 2013	668	2013
Defect-Dominated Doping and Contact Resistance in MoS₂ S McDonnell, R Addou, C Buie, RM Wallace, CL Hinkle ACS nano 8 (3), 2880-2888, 2014	664	2014
Zirconium and/or hafnium oxynitride gate dielectric RM Wallace, RA Stoltz, GD Wilk US Patent 6,013,553, 2000	582	2000
Near-unity photoluminescence quantum yield in MoS2 M Amani, DH Lien, D Kiriya, J Xiao, A Azcatl, J Noh, SR Madhvapathy, ... Science 350 (6264), 1065-1068, 2015	555	2015
The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS₂ Interfaces C Gong, L Colombo, RM Wallace, K Cho Nano letters 14 (4), 1714-1720, 2014	545	2014
High-K materials and metal gates for CMOS applications J Robertson, RM Wallace Materials Science and Engineering: R: Reports 88, 1-41, 2015	479	2015
MoS₂ P-type Transistors and Diodes Enabled by High Work Function MoO_x Contacts S Chuang, C Battaglia, A Azcatl, S McDonnell, JS Kang, X Yin, M Tosun, ... Nano letters 14 (3), 1337-1342, 2014	478	2014
Hole Selective MoO_x Contact for Silicon Solar Cells C Battaglia, X Yin, M Zheng, ID Sharp, T Chen, S McDonnell, A Azcatl, ... Nano letters 14 (2), 967-971, 2014	468	2014
GaAs interfacial self-cleaning by atomic layer deposition CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ... Applied Physics Letters 92 (7), 071901, 2008	452	2008
Stable zirconium silicate gate dielectrics deposited directly on silicon GD Wilk, RM Wallace Applied Physics Letters 76 (1), 112-114, 2000	444	2000
Two-dimensional gallium nitride realized via graphene encapsulation ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ... Nature materials 15 (11), 1166-1171, 2016	436	2016
Zirconium and/or hafnium silicon-oxynitride gate dielectric RM Wallace, RA Stoltz, GD Wilk US Patent 6,020,243, 2000	418	2000
Conformal dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics B Lee, SY Park, HC Kim, KJ Cho, EM Vogel, MJ Kim, RM Wallace, J Kim Applied Physics Letters 92 (20), 203102, 2008	356	2008
First-principles study of metal–graphene interfaces C Gong, G Lee, B Shan, EM Vogel, RM Wallace, K Cho Journal of Applied Physics 108 (12), 123711, 2010	350	2010

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